机译:金属-金属-金属结构在冷阴极制造中的电子性能研究科学出版物
Problem statement: The electrical properties of thin film structures consisting of metalinsulator- metal sandwiches are important in electronic devices. Approach: The electrical properties of thin film structures consisting of metal-insulator-metal sandwiches are investigated in this experimental work. Results: We are discussed of the electroformed metal-insulator-metal structures Au-MgF2-Au and comparison with other Au-SiO/CeF3-Au, Cu-CeF3-Cu, Cu-SiO-Cu, Au-CeF3-Au specimens. There explains various properties including electron emission, electroluminescence, memory effects and, the differential negative resistance. The article is based upon experiments which identify the conduction process to be trap-controlled thermally activated tunneling between metal islands produced in the forming process. These devices undergo an electroforming process leading to resistivity decrease of several orders of magnitude along with a negative resistance region in their I-V characteristics. Conclusion/Recommendations: Experimental results show that Cu-SiO-Cu and Au- MgF2-Au Mg specimens have high circulating current at room temperature and can be implication for the production of commercial electroformed devices such as cold cathode.
问题陈述: B>由金属绝缘体-金属三明治组成的薄膜结构的电性能在电子设备中很重要。 方法: B>在此实验工作中,研究了由金属-绝缘体-金属夹层组成的薄膜结构的电性能。 结果: B>我们讨论了电铸金属-绝缘体-金属结构Au-MgF 2 SUB> -Au的结构及其与其他Au-SiO / CeF 3 SUB的比较> -Au,Cu-CeF 3 SUB> -Cu,Cu-SiO-Cu,Au-CeF 3 SUB> -Au标本。其中解释了各种特性,包括电子发射,电致发光,记忆效应以及差分负电阻。该文章基于实验,该实验将传导过程确定为在成型过程中产生的金属岛之间的陷阱控制的热激活隧穿。这些器件经过电铸工艺,导致电阻率下降了几个数量级,同时I-V特性中的电阻值为负值。 结论/建议: B>实验结果表明,Cu-SiO-Cu和Au-MgF 2 SUB> -Au Mg样品在室温下具有较高的循环电流,可能对生产具有重要意义。商用电铸设备,例如冷阴极。 P>
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