A comparative study of the density of defect states in bulk samples and thin films of glassy Se$_{90}$Sb$_{10}$

DWIVEDI PRABHAT K; KUMAR A1; KUMAR ANJANI; SHUKLA R K

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A comparative study of the density of defect states in bulk samples and thin films of glassy Se$_{90}$Sb$_{10}$

机译：大量样品和玻璃状Se $ _ {90} $ Sb $ _ {10} $薄膜中缺陷态密度的比较研究

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The present paper reports the comparative study of density of defect states (DOS) between bulk samples and thin films of glassy Se$_{90}$Sb$_{10}$. These glasses have been prepared by the quenching technique. Thin films of these glasses have been prepared by vacuum evaporation technique. Space-charge-limited conduction (SCLC) has been measured at different temperatures.The density of localized states near Fermi level is calculated by fitting the data to the theory of SCLC for the case of uniform distribution of localized states for bulk as well as for thin films. A comparison has been made between the density of states calculated in these two cases.

机译：本文报道了块状样品和玻璃态Se $ _ {90} $ Sb $ _ {10} $薄膜之间的缺陷态密度（DOS）的比较研究。这些玻璃是通过淬火技术制备的。这些玻璃的薄膜已经通过真空蒸发技术制备。在不同温度下对空间电荷限制传导（SCLC）进行了测量。通过将数据拟合到SCLC的理论中，可以计算在费米能级附近的局域态密度。薄膜。在这两种情况下计算出的状态密度之间进行了比较。

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《Pramana》 |2016年第5期|共页
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DWIVEDI PRABHAT K; KUMAR A1; KUMAR ANJANI; SHUKLA R K;
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2. Dielectric Properties and A.C. Conductivity in Glassy Se_(90)Sb_(10): Estimation of Density of Defect States [J] . Suresh Kumar Sharma, A. Kumar, D. Kumar, Materials Focus . 2017,第5期

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A comparative study of the density of defect states in bulk samples and thin films of glassy Se$_{90}$Sb$_{10}$

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