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FCCSP IMC growth under reliability stress follows automotive criteria

机译：FCCSP IMC在可靠性压力下的增长遵循汽车标准

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Purpose The Kirkendall void had been a well-known issue for long-term reliability of semiconductor interconnects; while even the KVs exist at the interfaces of Cu and Sn, it may still be able to pass the condition of unbias long-term reliability testing, especially for 2,000 cycles of temperature cycling test and 2,000 h of high temperature storage. A large number of KVs were observed after 200 cycles of temperature cycling test at the intermetallic Cusub3/subSn layer which locate between the intermetallic Cusub6/subSnsub5/sub and Cu layers. These kinds of voids will grow proportional with the aging time at the initial stage. This paper aims to compare various IMC thickness as a function of stress test, the Cusub3/subSn and Cusub6/subSnsub5/sub do affected seriously by heat, but Nisub3/subSnsub4/sub is not affected by heat or moisture. Design/methodology/approach The package is the design in the flip chip-chip scale package with bumping process and assembly. The package was put in reliability stress test that followed AEC-Q100 automotive criteria and recorded the IMC growing morphology. Findings The Cusub6/subSnsub5/sub intermetallic compound is the most sensitive to continuous heat which grows from 3 to 10 μm at high temperature storage 2,000 h testing, and the second is Cusub3/subSn IMC. Cusub6/subSnsub5/sub IMC will convert to Cusub3/subSn IMC at initial stage, and then Kirkendall void will be found at the interface of Cu and Cusub3/subSn IMC, which has quality concerning issue if the void’s density grows up. The first phase to form and grow into observable thickness for Ni and lead-free interface is Nisub3/subSnsub4/sub IMC, and the thickness has little relationship to the environmental stress, as no IMC thickness variation between TCT, uHAST and HTSL stress test. The more the Sn exists, the thicker Nisub3/subSnsub4/sub IMC will be derived from this experimental finding compare the Cu/Ni/SnAg cell and Ni/SnAg cell. Research limitations/implications The research found that FCCSP can pass automotive criteria that follow AEC-Q100, which give the confidence for upgrading the package type with higher efficiency and complexities of the pin design. Practical implications This result will impact to the future automotive package, how to choose the best package methodology and what is the way to do the package. The authors can understand the tolerance for the kind of flip chip package, and the bump structure is then applied for high-end technology. Originality/value The overall three kinds of bump structures, Cu/Ni/SnAg, Cu/SnAg and Ni/SnAg, were taken into consideration, and the IMC growing morphology had been recorded. Also, the IMC had changed during the environmental stress, and KV formation was reserved.
机译：目的Kirkendall空隙一直是半导体互连的长期可靠性的众所周知的问题。尽管即使KV都存在于Cu和Sn的界面上，它仍可能能够通过无偏长期可靠性测试的条件，特别是对于2,000个温度循环测试循环和2,000 h高温存储的条件。经过200个循环的温度循环测试后，位于金属间Cu 6 Sn 5 3 Sn层观察到大量KV。 >和铜层。这些空隙在初始阶段将与老化时间成比例增长。本文旨在比较各种IMC厚度随应力测试的变化，Cu 3 Sn和Cu ​​ 6 Sn 5 受热影响严重，但Ni 3 Sn 4 不受热量或水分的影响。设计/方法/方法封装是倒装芯片级封装中的设计，具有凸块工艺和组装。该封装经过可靠性测试，该测试遵循AEC-Q100汽车标准，并记录了IMC的生长形态。发现Cu 6 Sn 5 金属间化合物对连续热最敏感，在高温存储2,000小时的测试中，连续热从3μm增长到10μm，第二个是Cu < sub> 3 Sn IMC。 Cu 6 Sn 5 IMC在初始阶段将转换为Cu 3 Sn IMC，然后在Cu和Cu 3 Sn IMC，如果空隙的密度增大，其质量会引起问题。 Ni 3 Sn 4 IMC形成并生长到Ni和无铅界面的可观察厚度的第一阶段，该厚度与环境应力关系不大，因为在TCT，uHAST和HTSL应力测试之间，IMC厚度没有变化。与Cu / Ni / SnAg电池和Ni / SnAg电池相比，该实验发现将得到更多的Sn，更厚的Ni 3 Sn 4 IMC。研究局限性/含义研究发现，FCCSP可以通过符合AEC-Q100的汽车标准，从而有信心以更高的效率和引脚设计的复杂性来升级封装类型。实际意义该结果将影响未来的汽车封装，如何选择最佳的封装方法以及封装的方式。作者可以理解对于倒装芯片封装的公差，然后将凸块结构应用于高端技术。独创性/价值考虑到了三种总体的凸块结构，Cu / Ni / SnAg，Cu / SnAg和Ni / SnAg，并记录了IMC的生长形态。另外，IMC在环境压力下发生了变化，并且保留了KV的形成。

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