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Photodeprotectable N-Alkoxybenzyl Aromatic Polyamides

机译：可光脱保护的N-烷氧基苄基芳族聚酰胺

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N -alkoxybenzyl aromatic polyamides were synthesized by polycondensation of N -alkoxybenzyl aromatic diamine with equimolar dicarboxylic acid chloride in the presence of 2.2 equiv. of pyridine at room temperature for 2 days. The obtained polyamides were mainly cyclic polymers, as determined by means of matrix-assisted laser desorption ionization time-of-flight (MALDI-TOF) mass spectrometry, and showed higher solubility in organic solvents than unprotected aromatic polyamides. Photodeprotection of N -alkoxybenzyl aromatic polyamide film containing photo acid generator (PAG) proceeded well under UV irradiation (5 J/cm 2 ), followed by heating at 130 °C for 15 min. The nature of the polymer end groups of N-alkoxybenzyl aromatic polyamides was found to be crucial for photodeprotection reactivity. These polymers are promising candidates for photosensitive heat-resistant materials for fine Cu wiring formation by electroless Cu plating of high-density semiconductor packaging substrates.
机译：N-烷氧基苄基芳族聚酰胺是通过在2.2当量存在下将N-烷氧基苄基芳族二胺与等摩尔二羧酸氯化物缩聚而合成的。吡啶在室温下放置2天。借助于基质辅助激光解吸电离飞行时间（MALDI-TOF）质谱法测定，所得聚酰胺主要是环状聚合物，并且在有机溶剂中的溶解度比未保护的芳族聚酰胺高。含有光产酸剂（PAG）的N-烷氧基苄基芳香族聚酰胺薄膜的光脱保护在UV辐射（5 J / cm 2）下进行得很好，然后在130°C加热15分钟。发现N-烷氧基苄基芳族聚酰胺的聚合物端基的性质对于光脱保护反应性至关重要。这些聚合物是用于通过高密度半导体封装基板的化学镀铜形成精细的铜布线的光敏耐热材料的有希望的候选物。

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