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首页> 外文期刊>The Open Crystallography Journal >P-ZnO-Si Photodiodes Prepared by Ultrasonic Spraying Pyrolysis Method
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P-ZnO-Si Photodiodes Prepared by Ultrasonic Spraying Pyrolysis Method

机译：超声喷涂热解法制备P-ZnO / n-Si光电二极管

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摘要

ZnO ultraviolet (UV)/visible photodiodes were fabricated. The N-In codoped p-type ZnO films were depositedon (111)-oriented silicon substrate by ultrasonic spraying pyrolysis method. It was found the photocurrent approximately3.910-7 A at a bias of 1 V and a photocurrent to dark current contrast ratio higher than around two orders of magnitude.The photodiodes exhibited two higher responsive regions denoted as A and B, respectively. Region A at wavelength from400 nm to 700 nm was owing to ZnO film absorption occurring through the band-to-deep level, and region B at wavelengthfrom 700 nm to 1000 nm was owing to Si substrate absorption occurring through the band edge.
机译：制作了ZnO紫外（UV）/可见光电二极管。通过超声喷涂热解法将N-In共掺杂的p型ZnO薄膜沉积在（111）取向的硅衬底上。发现在1V偏压下的光电流约为3.910-7 A，光电流与暗电流的对比度高于两个数量级左右。光电二极管分别显示出两个较高的响应区域，分别表示为A和B.波长从400 nm到700 nm的区域A是由于通过带至深能级发生的ZnO薄膜吸收，而波长从700 nm到1000 nm的区域B是由于通过带边缘发生了Si衬底吸收。

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