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首页> 外文期刊>The Open Electrical & Electronic Engineering Journal >Dependence of the Deformation of 128×128 InSb Focal-plane Arrays on the Silicon Readout Integrated Circuit Thickness
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Dependence of the Deformation of 128×128 InSb Focal-plane Arrays on the Silicon Readout Integrated Circuit Thickness

机译：128×128 InSb焦平面阵列的变形对硅读出集成电路厚度的依赖性

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摘要

The square checkerboard buckling deformation appearing in indium antimonide infrared focal-plane arrays(InSb IRFPAs) subjected to the thermal shock tests, results in the fracturing of the InSb chip, which restricts its final yield.In light of the proposed three-dimensional modeling, we proposed the method of thinning a silicon readout integrated circuit(ROIC) to level the uneven top surface of InSb IRFPAs. Simulation results show that when the silicon ROIC isthinned from 300 μm to 20 μm, the maximal displacement in the InSb IRFPAs linearly decreases from 7.115 μm to 0.670μm in the upward direction, and also decreases linearly from 14.013 μm to 1.612 μm in the downward direction. Once thethickness of the silicon ROIC is less than 50 μm, the square checkerboard buckling deformation distribution presenting inthe thicker InSb IRFPAs disappears, and the top surface of the InSb IRFPAs becomes flat. All these findings imply thatthe thickness of the silicon ROIC determines the degree of deformation in the InSb IRFPAs under a thermal shock test,that the method of thinning a silicon ROIC is suitable for decreasing the fracture probability of the InSb chip, and that thisapproach improves the reliability of InSb IRFPAs.
机译：进行热冲击试验的锑化铟红外焦平面阵列（InSb IRFPAs）中出现的方格屈曲变形导致InSb芯片断裂，从而限制了其最终成品率。根据拟议的三维建模，我们提出了一种减薄硅读出集成电路（ROIC）来平整InSb IRFPAs不平坦顶表面的方法。仿真结果表明，当硅ROIC从300μm减小到20μm时，InSb IRFPAs的最大位移在向上方向从7.115μm减小到0.670μm，并且在向下方向从14.013μm减小到1.612μm 。一旦硅ROIC的厚度小于50μm，则在较厚的InSb IRFPA中出现的方形棋盘形屈曲变形分布消失，并且InSb IRFPA的顶表面变得平坦。所有这些发现表明，硅ROIC的厚度决定了在热冲击试验下InSb IRFPA中的变形程度，使硅ROIC变薄的方法适合于降低InSb芯片的断裂概率，并且这种方法可以改善InSb IRFPA的可靠性。

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