Long Term Transients in MOSFET 1/f Noise with Switched Bias

M.Y. Louie; L. Forbes

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Long Term Transients in MOSFET 1/f Noise with Switched Bias

机译：具有开关偏置的MOSFET 1 / f噪声中的长期瞬变

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Long term time dependent transients in l/f noise have been observed and are reported on NMOS transistors operatingwith switched gate bias. The results are interpreted as a modification of the time dependence of random telegraphsignals. The results have important implications in the understanding of the nature of l/f noise and in the understanding theeffect of l/f noise in switched capacitor and RF circuits with large amplitude switching gate voltages.

机译：L / f噪声中与时间有关的长期瞬态现象已经观察到，并在以开关栅极偏置工作的NMOS晶体管上得到了报道。结果被解释为对随机电报信号的时间依赖性的修改。这些结果对于理解l / f噪声的性质以及理解l / f噪声在具有大幅度开关栅极电压的开关电容器和RF电路中的影响具有重要意义。

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《The Open Electrical & Electronic Engineering Journal》 |2017年第1期|共3页
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M.Y. Louie; L. Forbes;
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中图分类电气、电子工业;
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2. MOSFET 1/f noise measurement under switched bias conditions [J] . van der Wel A.P., Klumperink E.A.M. IEEE Electron Device Letters . 2000,第1期

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4. Long term transients in MOSFET 1/f noise under switched bias conditions [C] . Louie, M.Y., Forbes, . 2005

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Long Term Transients in MOSFET 1/f Noise with Switched Bias

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