Monte Carlo Simulation of Non-Local Transport Effectsin Strained Si on Relaxed Si1 – xGexHeterostructures

F.Gámiz; J. B.Roldán; J. A.López-Villanueva

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Monte Carlo Simulation of Non-Local Transport Effectsin Strained Si on Relaxed Si1 – xGexHeterostructures

机译：松弛Si1 – xGex异质结构上应变硅非局部迁移效应的蒙特卡罗模拟

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Electron transport properties of strained-Si on relaxed Si1 – xGexchannel MOSFETs have been studied using a Monte Carlo simulator. The steady- and non-steady-statehigh-longitudinal field transport regimes have been described in detail. Electronvelocity-overshoot effects are studied in deep-submicron strained-Si MOSFETs, wherethey show an improvement over the performance of their normal silicon counterparts.The impact of the Si layer strain on the performance enhancement are described indepth in terms of microscopic magnitudes.

机译：已经使用蒙特卡罗模拟器研究了应变硅在松弛的Si1-xGexchannel MOSFET上的电子传输特性。已详细描述了稳态和非稳态高纵向场传输方式。在深亚微米应变硅MOSFET中研究了电子速度过冲效应，该效应表明它们比普通硅MOSFET的性能有所提高.Si层应变对性能增强的影响从微观角度进行了深入描述。

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来源
《VLSI Design》 |1998年第4期|共4页
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F.Gámiz; J. B.Roldán; J. A.López-Villanueva;
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中图分类微电子学、集成电路（IC）;
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Monte Carlo Simulation of Non-Local Transport Effectsin Strained Si on Relaxed Si1 – xGexHeterostructures

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