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首页> 外文期刊>Journal of Basic and Applied Physics >Mg(Fe0.8Ga0.2)2O4-??? Thin Films as Perspective Material for Spintronics
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Mg(Fe0.8Ga0.2)2O4-??? Thin Films as Perspective Material for Spintronics

机译：Mg（Fe0.8Ga0.2）2O4-???薄膜作为自旋电子学的透视材料

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摘要

Thin films Mg(Fe0.8Ga0.2)2O4-δ were obtained on Si substrates by ion-beam sputtering of Mg(Fe0.8Ga0.2)2O4+δ ceramic target. The thickness of the films was 200 and 400 nm. Optimal conditions for the transfer of the target material were determined. It was found that the composition of the films was close to the target composition. Optimal conditions for film crystallization in phase with spinel structure were determined. The crystal structure and magnetic properties of the films with different thicknesses (200 and 400 nm) were investigated. The films annealed at 900°C are characterized by maximum values of specific magnetization. Magnetotransport properties of the films with thicknesses 200 nm were investigated. Found that the negative coefficient of magnetoresistance increases from 1.33% (at 220 K) till 5.53% (at 180 K) with decreasing temperature.
机译：通过Mg（Fe0.8Ga0.2）2O4 +δ陶瓷靶的离子束溅射在Si衬底上获得了Mg（Fe0.8Ga0.2）2O4-δ薄膜。膜的厚度为200和400nm。确定了转移目标物质的最佳条件。发现膜的组成接近目标组成。确定了具有尖晶石结构相的薄膜结晶的最佳条件。研究了不同厚度（200和400 nm）的薄膜的晶体结构和磁性。在900°C退火的薄膜的特征在于最大比磁化强度。研究了厚度为200 nm的薄膜的磁输运性质。发现随着温度降低，负磁阻系数从1.33％（在220 K下）增加到5.53％（在180 K下）。

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