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首页> 外文期刊>Journal of Laser Micro/Nanoengineering >Picosecond-Laser Structuring of Thin Films for CIGS Solar Cells
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Picosecond-Laser Structuring of Thin Films for CIGS Solar Cells

机译：CIGS太阳能电池薄膜的皮秒激光结构

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摘要

Interest in complex multilayered CuIn x Ga (1-x) Se 2 solar cells has increased recently because of unique combination of factors such as low manufacturing cost and high photovoltaic conversion ef- ficiency. The efficiency of the thin-film solar cells with a large active area might be maintained making series interconnects in order to reduce photocurrent in thin films and resistance losses. Laser technologies are a promising method to accomplish the scribing processes . Lasers with the picosec- ond pulse duration were applied in structuring of conducting, semi-conducting and isolating films in the complex multilayered Cu(InGa)Se 2 (CIGS) solar cells deposited on the polyimide substrate. The selective removal of ITO and CIGS layers was achieved with the 355 nm irradiation without a sig- nificant damage to the underneath layers in the ITO/CIGS/Mo/PI solar cell system. The 355 nm wavelength was also found to be favorable for the absorber film scribing process in the ZnO/CIGS/Mo/PI solar cell system. High repetition rate picosecond lasers with a short pulse dura- tion offer new possibilities for high quality and efficiency scribing.
机译：由于低制造成本和高光电转换效率等因素的独特结合，最近人们对复杂的多层CuIn x Ga（1-x）Se 2太阳能电池的兴趣增加了。为了减少薄膜中的光电流和电阻损耗，可以通过形成串联互连来保持具有大有源面积的薄膜太阳能电池的效率。激光技术是完成划线过程的一种有前途的方法。将具有皮秒脉冲持续时间的激光器应用于沉积在聚酰亚胺基板上的复杂多层Cu（InGa）Se 2（CIGS）太阳能电池中的导电，半导电和隔离膜的结构化。 355 nm辐照可选择性除去ITO和CIGS层，而对ITO / CIGS / Mo / PI太阳能电池系统的下层无明显损害。还发现355nm波长对于ZnO / CIGS / Mo / PI太阳能电池系统中的吸收体膜划线工艺是有利的。具有短脉冲持续时间的高重复频率皮秒激光器为高质量和高效率的划刻提供了新的可能性。

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