Study of Quantitative and Qualitative Characteristics of Nickel Clusters and Semiconductor Structures

Elyor Bahriddinovich Saitov

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Study of Quantitative and Qualitative Characteristics of Nickel Clusters and Semiconductor Structures

机译：镍团簇和半导体结构的定量和定性特性研究

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The possibility of building of clusters of impurity atoms of Ni in silicon and controlling their parameters is currently investigated in the present research article. Our group develops a special technique for doping, the so-called “low-temperature doping” of semiconductors. This method of doping is based upon the diffusion process which is carried out in stages by gradually increasing temperature ranging from room temperature to the diffusion temperature.

机译：目前在本研究文章中研究了在硅中建立Ni的杂质原子簇并控制其参数的可能性。我们的小组开发了一种特殊的掺杂技术，即半导体的“低温掺杂”。这种掺杂方法基于扩散过程，该扩散过程是通过逐渐增加从室温到扩散温度的温度来分阶段进行的。

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《Journal of Materials Science and Chemical Engineering》 |2016年第5期|共6页
作者
Elyor Bahriddinovich Saitov;
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中图分类工程材料学;
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7. Study of Quantitative and Qualitative Characteristics of Nickel Clusters and Semiconductor Structures [O] . Elyor Bahriddinovich Saitov 2016

机译：镍簇和半导体结构的定量和定性特征研究

Study of Quantitative and Qualitative Characteristics of Nickel Clusters and Semiconductor Structures

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