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首页> 外文期刊>Journal of Microwaves, Optoelectronics and Electromagnetic Applications >Electrical and optical numerical modeling of DP-PPV based polymer light emitting diode
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Electrical and optical numerical modeling of DP-PPV based polymer light emitting diode

机译：基于DP-PPV的聚合物发光二极管的电和光学数值建模

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In this paper, an in-depth study of the electrical and optical characteristics of Polymer Light Emitting Diodes ITO/PEDOT: PSS/DP-PPV derivatives/Al(Ca) is presented. Three polymer materials are considered; poly(2,3-diphenyl-5-(4-heptyloxy-4'-oxytrimethylenediphenyl)-phenylenevinylene) (P 1 ), poly(2,3-diphenyl-5-[4-(4-pentylcyclohexyl)phenoxy]-propyl-p-phenylene vinylene) (P 2 ) and poly(2,3-diphenyl-5-(2-(1, 4, 5-triphenyl-1H-2-imidazoloyl)-1-oxytrimethylene phenyl) phenylene vinylene) (P 3 ). The J-V characteristics are investigated using a device model which includes the injection, transport, and recombination mechanisms. The electron and hole mobility of each material are fitted to experimental data. The charge balance factor CBF, the external quantum efficiency EQE, the Langevin recombination rates and the singlet exciton densities profiles are studied. The results are found to be in a good agreement with experimental data especially in the low current densities region, indicating that these PLEDs electrons mobility affects greatly the J-V characteristics compared with holes mobility, and that is because electrons band offset smaller than that of holes. The best performance is obtained with P1 device with a CBF value of almost unity and an EQE still low (4.7 %) but similar to other PPVs and MEH-PPVs based devices.
机译：本文对聚合物发光二极管ITO / PEDOT的电学和光学特性进行了深入研究：PSS / DP-PPV衍生物/ Al（Ca）。考虑了三种聚合物材料。聚（2,3-二苯基-5-（4-庚氧基-4'-氧基三亚甲基二苯基）-亚苯基亚乙烯基）（P 1），聚（2,3-二苯基-5- [4-（4-戊基环己基）苯氧基]-丙基-对亚苯基亚乙烯基）（P 2）和聚（2,3-二苯基-5-（2-（1，4，5-三苯基-1H-2-咪唑基）-1-氧三亚甲基苯基）亚苯基亚乙烯基）（P 3）。使用包括注入，传输和重组机制的设备模型研究了J-V特性。每种材料的电子迁移率和空穴迁移率均符合实验数据。研究了电荷平衡因子CBF，外部量子效率EQE，朗格文复合率和单重态激子密度分布。发现该结果与实验数据很好地吻合，尤其是在低电流密度区域中，这表明这些PLED的电子迁移率与空穴迁移率相比对J-V特性有很大影响，这是因为电子带偏移小于空穴迁移率。使用C1值几乎为1且EQE仍然很低（4.7％）的P1设备可获得最佳性能，但与其他基于PPV和MEH-PPV的设备相似。

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