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首页> 外文期刊>Journal of Microwaves, Optoelectronics and Electromagnetic Applications >An Amorphous Silicon Photo TFT with Si 3 N 4 /Al 2 O 3 or HfO 2 Double Layered Insulator for Digital Imaging Applications
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An Amorphous Silicon Photo TFT with Si 3 N 4 /Al 2 O 3 or HfO 2 Double Layered Insulator for Digital Imaging Applications

机译：具有Si 3 N 4 / Al 2 O 3或HfO 2双层绝缘体的非晶硅光电TFT用于数字成像应用

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This paper focuses on amorphous silicon photo thin-film transistors with double layered insulator using Si 3 N 4 /Al 2 O 3 or HfO 2 as candidates for the succession of Si 3 N 4 as a traditional insulator in the fabrication of hydrogenated amorphous silicon thin-film transistors. Whether for industry or for research, there is a need to investigate the use of thin gate insulators for these devices to overcome leakage current. Our investigations included direct and transfer characteristics in dark and under illumination, generated photocurrents, external quantum efficiency and responsivity. Performance is evaluated in terms of the dielectric thickness and nature. Improvements in the proposed structures regarding off-current, responsivity and quantum efficiency are achieved via these materials. Comparing with Si 3 N 4 /HfO 2 transistor, the Si 3 N 4 /Al 2 O 3 device shows the lowest off-current. The HfO 2 device presents the highest on-current when illuminated. The generated photocurrent is higher for Si 3 N 4 /HfO 2 transistor revealing a lower amount of trapped charge. Under illumination and for very thin thicknesses, both devices enhance the Si 3 N 4 device off-current and reach Si 3 N 4 single layer dielectric based phototransistor performance. external quantum efficiency and responsivity are higher in HfO 2 devices comparing with Al 2 O 3 devices. The results are promising and may support further investigations in order to develop high k gate insulators for MIS photo thin-film transistors.
机译：本文重点研究具有双层绝缘体的非晶硅光电薄膜晶体管，该晶体管使用Si 3 N 4 / Al 2 O 3或HfO 2作为继承者，将Si 3 N 4用作制造氢化非晶硅薄膜的传统绝缘体。膜晶体管。无论是用于工业还是用于研究，都需要研究在这些器件中使用薄栅绝缘体以克服漏电流的问题。我们的研究包括在黑暗和光照下的直接和转移特性，产生的光电流，外部量子效率和响应度。根据电介质厚度和性质评估性能。通过这些材料，可以实现所提出的关于电流，响应度和量子效率的结构的改进。与Si 3 N 4 / HfO 2晶体管相比，Si 3 N 4 / Al 2 O 3器件的截止电流最低。 HfO 2器件在被照亮时呈现出最大的导通电流。 Si 3 N 4 / HfO 2晶体管产生的光电流较高，表明捕获的电荷量较低。在光照下和非常薄的厚度下，这两种器件均可增强Si 3 N 4器件的截止电流，并达到基于Si 3 N 4单层介电层的光电晶体管性能。与Al 2 O 3器件相比，HfO 2器件的外部量子效率和响应度更高。结果是有希望的，并且可以支持进一步的研究，以开发用于MIS光电薄膜晶体管的高k栅绝缘体。

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