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首页> 外文期刊>Journal of Nuclear Physics, Material Sciences, Radiation and Applications >Investigation of the Saturation of Elemental Concentration in the Depth Profile of Low Energy Silver Ion Implants in Silicon
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Investigation of the Saturation of Elemental Concentration in the Depth Profile of Low Energy Silver Ion Implants in Silicon

机译：硅中低能银离子注入深度剖面中元素浓度的饱和度研究

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For the efficient absorption of light in a broad wavelength band, Si photovoltaic devices require a high concentration of metal atoms at a shallow depth up to a few 10s of nm in the Si substrates. Low energy (< 50 keV) implantation of Ag ions in Si is one of the most suitable synthesis steps to facilitate the formation of these metal nanoclusters at the shallow depths in Si. However, during the low energy implantation of the heavy ions, one of the unintended consequences is the sputtering of target atoms particularly if the target is made of lower Z materials such as Si. In this study, we have investigated the re-distribution of atoms in the target layers due to the surface sputtering effects from 50 keV Ag ion implantation in Si substrates. Initially, the implant profile was estimated with the widely used static simulation code, theStopping and Range of Ions in Matter (SRIM). However, it’s simulation routine lacks any consideration of the fluence dependent evolution of the target material. Therefore, we have explored the use of another ion-solid interaction code T-DYN, which considers the dynamic changes in the thickness and/or composition of the target material during the implantation process. For 50 keV Ag ion implantation in Si, the T-DYN simulation predicts the Ag ion depth profile reaches a maximum or saturation in the concentration at a critical ion fluence of ~7×1016 atoms/cm2, whereas for a more heavier element like Au, similar saturation in the concentration is predicted at a relatively lower fluence of ~4×1016 atoms/cm2. The depth profiles of the implanted Ag atoms extracted from experiments utilizing the Rutherford Backscattering Spectrometry and X-ray Photoelectron Spectroscopy characterization techniques show asymmetric distributions with the position of peak concentration depth gradually moving towards the Si surface with increasing implant ion fluence. Once the implantation ion fluence reached a critical value, the peak value of the elemental concentration is seen saturated similar to the predictions from T-DYN simulations.
机译：为了有效地吸收宽波长带中的光，Si光电器件需要在Si衬底中的浅深度达到几十秒的高浓度金属原子。将低能量（<50 keV）的Ag离子注入到Si中是最适合的合成步骤之一，有助于在Si的浅层深度形成这些金属纳米团簇。然而，在重离子的低能量注入期间，意外的后果之一是靶原子的溅射，特别是如果靶是由低Z材料（例如Si）制成的话。在这项研究中，我们研究了由于在硅衬底中进行50 keV Ag离子注入产生的表面溅射效应，靶层中原子的重新分布。最初，使用广泛使用的静态仿真代码“物质的离子停顿和幅度”（SRIM）估算植入物的轮廓。但是，它的模拟程序没有考虑目标材料与注量有关的演变。因此，我们探索了另一种离子-固体相互作用代码T-DYN的使用，该代码考虑了植入过程中目标材料厚度和/或组成的动态变化。对于在硅中注入50 keV的Ag离子，T-DYN模拟预测在临界离子通量约为7×1016原子/ cm2时，Ag离子深度分布达到浓度的最大值或饱和，而对于更重的元素（如Au） ，预计在〜4×1016原子/ cm2的相对较低的注量下，浓度会达到相似的饱和度。从利用卢瑟福背散射光谱法和X射线光电子能谱表征技术进行的实验中提取的被注入的Ag原子的深度分布图显示出不对称的分布，随着注入离子注量的增加，峰值浓度深度的位置逐渐移向Si表面。一旦注入离子通量达到临界值，元素浓度的峰值就会饱和，类似于T-DYN模拟的预测。

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