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首页> 外文期刊>Journal of the Ceramic Society of Japan >The effect of Gd substitution in perovskite lanthanum strontium manganite films for use in resistive switching devices
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The effect of Gd substitution in perovskite lanthanum strontium manganite films for use in resistive switching devices

机译：Gd置换在钙钛矿型镧锶锶锰矿薄膜中的应用

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La0.7? x Gd x Sr0.3MnO3 (LSGMO: x = 0.1, 0.3, and 0.5) perovskite manganite thin films were formed on a Pt(111)/Ti/SiO2/Si(100) substrate heated to 500°C using a radio frequency magnetron sputter. The effects of substituted Gd3+ on the physical, chemical, and electrical properties of perovskite manganite thin films were systematically investigated. X-ray diffraction results showed that the crystallinity of the films was affected by the substitution of La3+ with Gd3+ ions. Raman spectroscopy analysis showed an increase in both the tilt of the MnO6 octahedron and the structural distortion as a result of Gd3+ substitution. This is due to the increased structural instability of LSGMO associated with the rhombohedral structure, which can be contrasted with a stable crystalline structure of Gd0.7Sr0.3MnO3 such as orthorhombic. From the above analyses, it was revealed that structural distortion, crystallinity, and bond strength could affect on resistive switching property.
机译：La 0.7？ x Gd x Sr 0.3 MnO 3 （LSGMO：x =使用射频磁控溅射在加热到500°C的Pt（111）/ Ti / SiO 2 / Si（100）衬底上形成0.1、0.3和0.5）钙钛矿锰薄膜。系统研究了取代的Gd 3 + 对钙钛矿锰矿薄膜的物理，化学和电学性能的影响。 X射线衍射结果表明，La 3 + 被Gd 3 + 离子取代影响了薄膜的结晶度。拉曼光谱分析表明，MnO 6 八面体的倾斜度和Gd 3 + 取代导致的结构变形均增加。这是由于LSGMO与菱形结构相关的结构不稳定性增加，这与Gd 0.7 Sr 0.3 MnO 3 < / sub>，例如正交晶。从以上分析可以看出，结构变形，结晶度和结合强度可能会影响电阻开关性能。

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