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首页> 外文期刊>EPJ Web of Conferences >Magnetic, electrical and structural properties of annealed ferromagnetic (Zn,Sn)As2:Mn thin films on InP substrates: comparison with undoped ZnSnAs2
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Magnetic, electrical and structural properties of annealed ferromagnetic (Zn,Sn)As2:Mn thin films on InP substrates: comparison with undoped ZnSnAs2

机译：InP衬底上退火的铁磁（Zn，Sn）As2：Mn薄膜的磁，电和结构性质：与未掺杂的ZnSnAs2的比较

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摘要

We report the magnetic and electrical properties in Mn-doped and undoped (Zn,Sn)As2 epilayers, that were annealed at slightly higher temperatures than the growth temperature. (Zn,Sn)As2:Mn were epitaxially grown on InP (001) substrates at 300°C, and showed room-temperature ferromagnetism. The hole concentration, saturation magnetization and Curie temperature were measured and evaluated as a function of annealing temperature. The Curie temperature had a tendency to slightly increase at annealing temperatures up to 340°C, and completely disappeared at 400°C. The ferromagnetism could be attributed to hole-mediated ferromagnetism resulting from Mn ion substitutions at both the II-group Zn and IV-group Sn sites, especially from the large solubility of Mn2+ substitution at Zn sites. The disappearance of ferromagnetism may be explained by several types of mechanisms : migration of mobile interstitial Mn atoms, diffusion of substitutional Mn ions to the surface, substitution of interstitial Mn atoms on Zn vacancies, and formation of MnAs clusters. It is noteworthy that the growth of magnetic semiconductor thin films from substrate lattice matching is essential for avoiding magnetic secondary phases such as MnAs clusters.
机译：我们报告了在比生长温度稍高的温度下退火的Mn掺杂和未掺杂（Zn，Sn）As2外延层的磁和电性能。 （Zn，Sn）As2：Mn于300°C外延生长在InP（001）衬底上，并显示出室温铁磁性。测量并评估了空穴浓度，饱和磁化强度和居里温度，并将其作为退火温度的函数。在高达340℃的退火温度下，居里温度有略微升高的趋势，而在400℃下完全消失。铁磁性可归因于由空穴介导的铁磁性，这是由于在II组Zn和IV组Sn位置上都有Mn离子取代，特别是由于Zn位置上Mn2 +取代的溶解度大。铁磁性的消失可以用几种类型的机理来解释：可移动的间隙性Mn原子迁移，取代的Mn离子向表面扩散，间隙的Mn原子在Zn空位上的取代以及MnAs团簇的形成。值得注意的是，从衬底晶格匹配生长磁性半导体薄膜对于避免磁性次级相（例如MnAs团簇）至关重要。

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