In this paper, we report an easy and relatively cost effective fabrication technique of a wide band omnidirectional antireflective black silicon surface based on silicon nanowires (SiNWs). An effective and economical one step silver electroless catalytic etching method in an aqueous solution of AgNO3 and HF is used for the synthesis of the black silicon surface. The formation mechanism for SiNW arrays is explained in terms of a localized nanoelectrochemical cell. The length and diameter of the nanowires were controllable as we found a commensurate relationship between dimensions and the etching time. Different sample sizes were used to prove the technique's large scale production potential. Wide range near zero reflection is reported in the visible region due to the strong trapping and antireflective properties in addition to a wide angle up to ±60°. Raman scattering measurements confirmed the quantum size effect and phonon scattering in the fabricated structure with different diameters. A black silicon surface based on solid and porous SiNWs shows promising potential for photovoltaic, optoelectronic and energy storage applications.
展开▼
