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首页> 外文期刊>RSC Advances >Understanding rectifying and nonlinear bipolar resistive switching characteristics in Ni/SiNx/p-Si memory devices
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Understanding rectifying and nonlinear bipolar resistive switching characteristics in Ni/SiNx/p-Si memory devices

机译：了解Ni / SiN x / p-Si存储器件中的整流和非线性双极电阻切换特性

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Two resistive memory devices were prepared with different doping concentrations in the silicon bottom electrodes to explore the self-rectifying and nonlinear resistive switching characteristics of Ni/SiNx/p-Si devices. Due to the reduced current overshoot effect, using electroforming at a positive bias can produce bipolar-type resistive switching behavior. A higher self-rectification ratio in the Ni/SiNx/p+-Si device is achieved than in the Ni/SiNx/p++-Si device. The asymmetric I–V characteristics can be explained by the Schottky barrier that suppresses the reverse current, and it is controllable by the size of the conducting path. A conducting path with a high resistance value in a low resistance state is beneficial for a high selection ratio. Moreover, by controlling the compliance current, we demonstrate an improved self-rectifying and selection ratio. The results of our experiment provide a possible way to improve the nonlinear characteristics without the need for a selector device in CMOS compatible cross-point array applications.
机译：在硅底部电极中制备了两种掺杂浓度不同的电阻存储器件，以研究Ni / SiN x 的自整流和非线性电阻转换特性。小型> / p-Si器件。由于减小了电流过冲效应，因此在正偏压下使用电铸会产生双极型电阻切换行为。 Ni / SiN x / p + 中较高的自整流率-Si器件比Ni / SiN x / p ++ -Si器件。不对称的 I – V 特性可以通过抑制反向电流的肖特基势垒来解释，并且可以通过导电路径的大小来控制。在低电阻状态下具有高电阻值的导电路径有利于高选择比。此外，通过控制顺从电流，我们证明了改进的自整流和选择比。我们的实验结果为在CMOS兼容交叉点阵列应用中不需要选择器器件的情况下提供了一种改善非线性特性的可能方法。

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