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首页> 外文期刊>RSC Advances >Atomic layer deposition of Al2O3 on MoS2, WS2, WSe2, and h-BN: surface coverage and adsorption energy
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Atomic layer deposition of Al2O3 on MoS2, WS2, WSe2, and h-BN: surface coverage and adsorption energy

机译：Al 2 O 3 在MoS 2 ，WS 2 ，WSe 2 和h-BN：表面覆盖率和吸附能

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Uniform deposition of high-k dielectrics on two-dimensional (2D) crystals is highly desirable for their use in future nano-electronic devices. Here, the surface coverage of the Al2O3 films grown by atomic layer deposition (ALD) was investigated on mechanically-exfoliated MoS2, WS2, WSe2, and h-BN flakes for exploring the deposition kinetics of the Al2O3 films on the 2D crystals. The film coverage followed a decreasing order of WSe2 > WS2 > MoS2 > h-BN, which was mainly determined by the ALD temperature and adsorption energy (Eads) of the ALD precursor (trimethyl-aluminum) during the initial ALD cycles. The obtained |Eads| values of the precursor on the 2D crystals corresponded well to a van der Waals physisorption energy of 0.05–0.26 eV. Furthermore, the magnitude of the extracted Eads values showed a strong dependence on the induced dipole polarizability of the 2D crystals. The obtained results demonstrate that the surface coverage of the ALD high-k dielectrics can be modulated by choosing the types of the 2D substrates, and could provide a pathway for the integration of high-k dielectrics in 2D crystal-based nano-electronic devices.
机译：二维（2D）晶体上高 k 电介质的均匀沉积对于在未来的纳米电子设备中的使用是非常理想的。在此，研究了通过原子层沉积（ALD）生长的Al 2 O 3 膜的表面覆盖率机械剥离MoS 2 ，WS 2 ，WSe 2 和h-BN片用于研究Al 2 O 3 薄膜的沉积动力学在2D晶体上。膜的覆盖率依次为WSe 2 2 2 E ads ）决定在最初的ALD循环中的ALD前体（三甲基铝）。获得的| E ads | 2D晶体上的前体值与范德华物理吸附能0.05-0.26 eV很好。此外，提取的 E ads 值的大小强烈依赖于2D晶体的诱导偶极极化率。获得的结果表明，可以通过选择2D衬底的类型来调节ALD高 k 电介质的表面覆盖率，并可以为高 k < / em>基于2D晶体的纳米电子设备中的电介质。

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