• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>RSC Advances >Fluorinated benzothiadiazole and indacenodithieno[3,2-b]thiophene based regioregular-conjugated copolymers for ambipolar organic field-effect transistors and inverters
【24h】

Fluorinated benzothiadiazole and indacenodithieno[3,2-b]thiophene based regioregular-conjugated copolymers for ambipolar organic field-effect transistors and inverters

机译：氟化苯并噻二唑和茚并二噻吩并[3,2- b ]噻吩基的区域规则共轭共聚物，用于双极有机场效应晶体管和逆变器

获取原文
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We report the synthesis and characterization of a series of three soluble polymeric hybrids in benzothiadiazole–indacenodithieno[3,2-b]thiophene based ladder-type polymers (BT–IDTT) containing the acceptor unit 3,6-dithien-2-yl-2,5-dialkylpyrrolo[3,4-c]pyrrole-1,4-dione (DTDPP), and donor moieties 7,8-bithienyl benzo[1,2-b:4,5-b′]di-thiophene (BDTT) and 4,8-bis(5-ethylhexylselenophen-2-yl)benzo[1,2-b:4,5-b′]dithiophene (BDTSe) in BT–IDTT–DTDPP (P1), BT–IDTT–BDTT (P2) and BT–IDTT–BDTSe (P3) copolymers to tune the strength of ambipolar charge-carrier transport properties for organic field-effect transistors (OFETs) and ambipolar complementary inverters. A narrow band gap of 1.4–1.7 eV was achieved by the careful selection of the electron donor–acceptor unit and strong packing of those polymers in the film state. In particular, a very narrow bandgap of 1.38 eV and well-balanced ambipolar transistor characteristics were achieved by replacing benzodithiophene in P2 and P3 with diketopyrrolopyrrole in P1. Optimized top gate bottom contact OFETs with P1 polymer showed electron and hole mobilities of 0.015 and 0.007 cm2 V?1 s?1 respectively, and inverter gain of ～14 using poly(methyl methacrylate) gate dielectric. Interestingly, hole transport properties were improved to a mobility of 0.1 cm2 V?1 s?1 in all OFETs with the BT–IDTT ladder-type polymer using fluorinated P(VDF-TrFE) dielectric, which can be ascribed to the increased hole accumulation at the semiconductor–dielectric interface.
机译：我们报告了一系列基于苯并噻二唑-茚并二噻吩并[3,2- b ]噻吩的梯形聚合物（BT-IDTT）中包含受体单元3,6的三种可溶性聚合物杂化物的合成和表征-二噻吩-2-基-2,5-二烷基吡咯并[3,4- c ]吡咯-1,4-二酮（DTDPP）和供体部分7,8-二苯基苯并[1,2 - b ：4,5- b ']二噻吩（BDTT）和4,8-双（5-乙基己基硒代吩-2-基）苯并[1,2] - b ：4,5- b ']二噻吩（BDTSe）在BT–IDTT–DTDPP（P1），BT–IDTT–BDTT（P2）和BT–IDTT中-BDTSe（P3）共聚物，用于调节有机场效应晶体管（OFET）和双极性互补逆变器的双极性电荷载流子传输特性的强度。通过精心选择电子给体-受体单元并以薄膜状态牢固填充这些聚合物，可以实现1.4-1.7 eV的窄带隙。特别是，通过用P1中的二酮吡咯并吡咯取代P2和P3中的苯并二噻吩实现了1.38 eV的非常窄的带隙和平衡的双极晶体管特性。与P1聚合物优化的顶栅底部接触OFETs的电子迁移率和空穴迁移率分别为0.015和0.007 cm 2 V ？1 s ？1 ，并使用聚（甲基丙烯酸甲酯）栅极电介质获得〜14的逆变器增益。有趣的是，空穴传输性能提高到0.1 cm 2 V ？1 s <在所有使用氟化P（VDF-TrFE）电介质的BT–IDTT梯形聚合物中的OFET中，sup>？1 都可以归因于半导体-电介质界面处空穴积累的增加。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号