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Unusual renormalization group (RG) flow and temperature-dependent phase transition in strongly-insulating monolayer epitaxial graphene

机译：强绝缘单层外延石墨烯中的异常重整化组（RG）流动和温度相关的相变

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By changing the measurement temperature (T), one can vary the effective sample size so as to study the renormalization group (RG) (or T-driven) flow of a semiconductor, a topological insulator, or a graphene device in the complex conductivity plane. Here we report RG flow of large-area, strongly disordered monolayer graphene epitaxially grown on SiC, which becomes insulating as T decreases for zero magnetic field. We observe cusp-like RG flow towards (σxy = e2/h, σxx = e2/h) where σxy and σxx are Hall conductivity and diagonal conductivity respectively. Such features, indicative of a fixed-temperature phase transition, have never been observed before and cannot be explained by existing RG models based on a modular symmetry group. Therefore, our results suggest the need for new theoretical models and experimental study leading to an understanding of strongly disordered two-dimensional materials such as graphene, few-layer black phosphorus, WSe2, and so on.
机译：通过更改测量温度（ T ），可以改变有效样本量，从而研究半导体的重归一化组（RG）（或 T 驱动）流动，电导率平面中的拓扑绝缘体或石墨烯器件。在这里，我们报告了外延生长在SiC上的大面积，高度无序的单层石墨烯的RG流动，随着 T 的减小，零磁场使RG绝缘。我们观察到朝（σ xy = e 2 / h ，σ xx < / small> = e 2 / h ），其中σ < sub> xy 和σ xx 霍尔电导率和对角线电导率。这种指示固定温度相变的特征以前从未见过，也无法由基于模块化对称组的现有RG模型进行解释。因此，我们的结果表明需要新的理论模型和实验研究，以使人们对石墨烯，少层黑磷，WSe 2 ，依此类推。

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