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Relationship between the dipole moment of self-assembled monolayers incorporated in graphene transistors and device electrical stabilities

机译：石墨烯晶体管中自组装单分子层的偶极矩与器件电稳定性之间的关系

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Surface characteristics of the gate-dielectric layers in graphene field-effect transistors (FETs) critically affect the electrical properties of the devices. In this report, the effects of self-assembled monolayers (SAMs) on the electrical properties of graphene FETs were examined by using various SAM buffer layers with different end groups and alkyl chain lengths. Especially, the dipole moment of the SAMs affects the doping properties of graphene as well as field-effect mobility, hysteresis, and stability of graphene FETs. The type and magnitude of doping are dependent on the functional groups in SAMs: Electron withdrawing fluorine groups p-dope the graphene whereas electron donating amine groups n-dope the graphene. The electrical stabilities such as hysteresis and gate-bias instability are mainly governed by the magnitude of the dipole moment in SAMs. Hexamethyldisilazane treatment resulted in graphene FETs with the highest electrical stabilities, because of the short one aliphatic alkyl chain with a negligible dipole moment. In contrast, in graphene FETs with SAMs having a strong dipole moment, electrical stabilities deteriorated by the charge trapping in SAMs.
机译：石墨烯场效应晶体管（FET）中的栅介电层的表面特性会严重影响器件的电性能。在此报告中，通过使用具有不同端基和烷基链长度的各种SAM缓冲层，研究了自组装单层（SAM）对石墨烯FET的电性能的影响。特别是，SAM的偶极矩会影响石墨烯的掺杂特性以及场效应迁移率，磁滞和石墨烯FET的稳定性。掺杂的类型和强度取决于SAM中的官能团：吸电子的氟基团p掺杂石墨烯，而给电子的胺基团n掺杂石墨烯。诸如磁滞和栅极偏置不稳定性之类的电稳定性主要取决于SAM中偶极矩的大小。六甲基二硅氮烷处理产生的石墨烯FET具有最高的电稳定性，这是因为一个短的脂族烷基链的偶极矩可忽略不计。相反，在具有强偶极矩的SAM的石墨烯FET中，电稳定性由于SAM中的电荷俘获而恶化。

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