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AFM-thermoreflectance for simultaneous measurements of the topography and temperature

机译:AFM热反射仪可同时测量形貌和温度

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To understand the thermal failure mechanisms of electronic devices, it is essential to measure the temperature and characterize the thermal properties of individual nanometer-scale transistors in electronic devices. Previously, scanning thermal microscopy (SThM) has been used to measure the local temperature with nanometer-scale spatial resolutions using a probe with a built-in temperature sensor. However, this type of temperature measurement requires additional equipment to process the temperature-sensing signals and expensive temperature-sensor-integrated probes fabricated by complicated MEMS processes. Here, we present a novel technique which enables the simultaneous measurement of the temperature and topography of nanostructures only with a conventional atomic force microscope (AFM) of the type commonly used for topography measurements and without any modifications of the probe and extra accessories for data acquisition. The underlying principle of the proposed technique is that the local temperature of a specimen is estimated quantitatively from the thermoreflectance of a bare silicon AFM probe that is in contact with a specimen. The temperature obtained by our technique is found to be consistent with a result obtained by SThM measurements.
机译:为了了解电子设备的热失效机理,必须测量温度并表征电子设备中各个纳米级晶体管的热特性。以前,扫描热显微镜(SThM)已用于使用带有内置温度传感器的探头以纳米尺度的空间分辨率测量局部温度。但是,这种类型的温度测量需要额外的设备来处理温度感测信号,并且需要昂贵的由复杂的MEMS工艺制成的集成了温度传感器的探头。在这里,我们介绍了一种新颖的技术,该技术仅使用常规的原子力显微镜(AFM)即可同时测量纳米结构的温度和形貌,而这种原子力显微镜通常用于形貌测量,而无需对探针和数据采集的额外附件进行任何修改。所提出的技术的基本原理是,根据与样品接触的裸硅AFM探针的热反射率来定量估计样品的局部温度。发现通过我们的技术获得的温度与通过SThM测量获得的结果一致。

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