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首页> 外文期刊>RSC Advances >Resistive switching and related magnetization switching in Pt/BiFeO3/Nb:SrTiO3 heterostructures
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Resistive switching and related magnetization switching in Pt/BiFeO3/Nb:SrTiO3 heterostructures

机译：Pt / BiFeO 3 / Nb：SrTiO 3 异质结构中的电阻转换和相关的磁化转换

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摘要

BiFeO3 (BFO) thin films were epitaxially grown on a 0.7 wt% Nb-doped (001) SrTiO3 (NSTO) single-crystal substrate by pulsed laser deposition to form a Pt/BFO/NSTO heterostructure. This heterostructure exhibits stable bipolar resistive switching behavior with a maximum Roff/Ron ratio of 105, well retention and multilevel memory properties. Meanwhile, the saturation magnetization (Ms) of BFO film shows reversible switching upon different resistance states. The BFO film shows high saturation magnetization at a high resistance state, while it shows low saturation magnetization at a low resistance state. These resistive and magnetization switching properties are attributed to the modulation effect of the ferroelectric polarization reversal on the width of depletion region and the height of potential barrier via the charge trapping and detrapping process combined with the migration of oxygen vacancies at the BFO/NSTO interface. This study demonstrates that Pt/BFO/NSTO heterostructure has potential application in nonvolatile resistive switching memory and novel magnetoelectric coupling devices.
机译：BiFeO 3 （BFO）薄膜外延生长在0.7 wt％掺Nb（001）SrTiO 3 R off / R 导通 比率为10 5 ，具有良好的保留性和多级存储特性。同时，BFO膜的饱和磁化强度（ M s ）在不同的电阻状态下显示可逆转换。 BFO膜在高电阻状态下显示高饱和磁化强度，而在低电阻状态下显示低饱和磁化强度。这些电阻和磁化转换特性归因于铁电极化反转对耗尽区宽度和势垒高度的调制效应，通过电荷俘获和去俘获过程结合氧空位的迁移在BFO / NSTO界面上。这项研究表明，Pt / BFO / NSTO异质结构在非易失性电阻开关存储器和新型磁电耦合器件中具有潜在的应用前景。

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