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首页> 外文期刊>RSC Advances >Damage and recovery induced by a high energy e-beam in a silicon nanofilm
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Damage and recovery induced by a high energy e-beam in a silicon nanofilm

机译：硅纳米膜中高能电子束引起的损伤和恢复

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Herein, electron beam-induced damage and recovery of a silicon thin film was investigated in situ via transmission electron microscopy (TEM). Via only controlling the electron beam flux, the damage and recovery processes could be controlled under electron beam irradiation at ambient temperature with an energy of 200 keV. Above the threshold value of the flux, the crystalline phase was transformed into an amorphous state, even formed a hole. The damage process became more pronounced with the increasing electron flux. Under this threshold value, the reverse process, including hole recovery and recrystallization, can be achieved. The effects of flux and the mechanisms regarding these phenomena have been proposed. This study can provide insights into the shaping of materials and control of their structure through high energy beam engineering.
机译：在此，通过透射电子显微镜（TEM）对电子束引起的硅薄膜的损伤和恢复进行了原位研究。 Via 仅控制电子束通量，在环境温度为200 keV的电子束辐照下，可以控制损伤和恢复过程。在通量的阈值以上，结晶相转变为非晶态，甚至形成孔。随着电子通量的增加，破坏过程变得更加明显。在该阈值以下，可以实现包括空穴恢复和再结晶在内的逆过程。已经提出了通量的影响以及关于这些现象的机理。这项研究可以通过高能束工程为材料的成型和结构的控制提供见解。

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