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Tuning analog resistive switching and plasticity in bilayer transition metal oxide based memristive synapses

机译：调整基于双层过渡金属氧化物的忆阻突触的模拟电阻切换和可塑性

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Memristive devices with analog resistive switching characteristics are widely investigated nowadays for electronic synapses that facilitate memory and learning in neuromorphic computing hardware. It is therefore essential to understand and optimize the incremental switching behavior of the cells in order to enhance the functionality of memristive neural networks. Here we report a systematic study on the analog switching of bilayer oxide based memristive synapses and show that transition metal oxides with rich intermediate phases, such as WOx, are able to provide larger number of conductance states compared with oxides with few intermediate phases such as TaOx and HfOx. This could be attributed to the intrinsically different electrical properties of the intermediate phases that jointly contribute to the change of device conductance, in addition to that caused by the varied geometry of filaments during programming. Controlled studies adopting different materials, compositions and sequences of oxide bilayers reveal that the analog switching is mainly dominated by the switching layer, thus providing clues to the optimization of memristive devices for future neuromorphic applications.
机译：如今，具有模拟电阻开关特性的忆阻器件已广泛用于电子突触，这些突触可促进神经形态计算硬件中的存储和学习。因此，必须了解和优化细胞的增量开关行为，以增强忆阻神经网络的功能。在这里，我们报告了基于双层氧化物的忆阻突触的模拟转换的系统研究，并显示了具有丰富中间相的过渡金属氧化物，例如WO x 与具有较少中间相的氧化物（如TaO x 和HfO <很少）相比，small>能够提供更多的电导状态sub> x 。这可以归因于中间相的本质上不同的电特性，除了编程过程中细丝几何形状的变化所引起的电特性之外，这些电特性共同有助于器件电导的变化。采用不同材料，氧化物双层的组成和顺序的对照研究表明，模拟开关主要由开关层控制，从而为忆阻器件的优化提供了线索，可用于未来的神经形态学应用。

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