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首页> 外文期刊>RSC Advances >Enhanced efficiency of Cu2ZnSn(S,Se)4 solar cells via anti-reflectance properties and surface passivation by atomic layer deposited aluminum oxide
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Enhanced efficiency of Cu2ZnSn(S,Se)4 solar cells via anti-reflectance properties and surface passivation by atomic layer deposited aluminum oxide

机译：通过抗反射特性和原子层沉积氧化铝的表面钝化作用，提高了Cu2ZnSn（S，Se）4太阳能电池的效率

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Reducing interface recombination losses is one of the major challenges in developing Cu _(2) ZnSn(S,Se) _(4) (CZTSSe) solar cells. Here, we propose a CZTSSe solar cell with an atomic layer deposited Al _(2) O _(3) thin film for surface passivation. The influence of passivation layer thickness on the power conversion efficiency (PCE), short-circuit current density ( J _(sc) ), open-circuit voltage ( V _(oc) ) and fill factor (FF) of the solar cell is systematically investigated. It is found that the Al _(2) O _(3) film presents notable antireflection (AR) properties over a broad range of wavelengths (350–1000 nm) for CZTSSe solar cells. With increasing Al _(2) O _(3) thickness (1–10 nm), the average reflectance of the CZTSSe film decreases from 12.9% to 9.6%, compared with the average reflectance of 13.6% for the CZTSSe film without Al _(2) O _(3) . The Al _(2) O _(3) passivation layer also contributes to suppressed surface recombination and enhanced carrier separation. Passivation performance is related to chemical and field effect passivation, which is due to released H atoms from the Al–OH bonds and the formation of Al vacancies and O interstitials within Al _(2) O _(3) films. Therefore, the J _(sc) and V _(oc) of the CZTSSe solar cell with 2 nm-Al _(2) O _(3) were increased by 37.8% and 57.8%, respectively, in comparison with those of the unpassivated sample. An optimal CZTSSe solar cell was obtained with a V _(oc) , J _(sc) and η of 0.361 V, 33.78 mA and 5.66%. Our results indicate that Al _(2) O _(3) films show the dual functions of AR and surface passivation for photovoltaic applications.
机译：减少界面复合损耗是开发Cu_（2）ZnSn（S，Se）_（4）（CZTSSe）太阳能电池的主要挑战之一。在这里，我们提出了一种CZTSSe太阳能电池，其原子层上沉积有Al _（2）O _（3）薄膜用于表面钝化。钝化层厚度对太阳能电池的功率转换效率（PCE），短路电流密度（J _（sc）），开路电压（V _（oc））和填充系数（FF）的影响为系统地调查。已经发现，对于CZTSSe太阳能电池，Al _（2）O _（3）膜在很宽的波长范围（350-1000 nm）内表现出显着的减反射（AR）性能。随着Al _（2）O _（3）厚度（1-10 nm）的增加，CZTSSe膜的平均反射率从12.9％降低到9.6％，而不含Al _的CZTSSe膜的平均反射率则为13.6％。 （2）O _（3）。 Al _（2）O _（3）钝化层还有助于抑制表面重组和增强载流子分离。钝化性能与化学和场效应钝化有关，这是由于Al-OH键中释放的H原子以及在Al _（2）O _（3）薄膜中形成Al空位和O间隙而引起的。因此，与2nm-Al _（2）O _（3）相比，CZTSSe太阳能电池的J _（sc）和V _（oc）分别比分别增加了37.8％和57.8％。未钝化的样品。获得了最佳的CZTSSe太阳能电池，其V_（oc），J_（sc）和η分别为0.361V，33.78mA和5.66％。我们的结果表明，Al _（2）O _（3）膜显示了AR和表面钝化在光伏应用中的双重功能。

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