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Atomic-scale investigation of MgO growth on fused quartz using angle-dependent NEXAFS measurements

机译：使用角度依赖性NEXAFS测量对熔融石英上MgO的生长进行原子级研究

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The phenomena related to thin film growth have always been interesting to the scientific community. Experiments related to these phenomena not only provide an understanding but also suggest a path for the controlled growth of these films. For the present work, MgO thin film growth on fused quartz was investigated using angle-dependent near-edge X-ray absorption fine structure (NEXAFS) measurements. To understand the growth of MgO, sputtering was allowed for 5, 10, 25, 36, 49, 81, 144, 256, and 400?min in a vacuum better than 5.0 × 10 ~(?7) torr. NEXAFS measurements revealed the evolution of MgO at the surface of fused quartz for sputtering durations of 144, 256, and 400 min. Below these sputtering durations, no MgO was observed. NEXAFS measurements further envisaged a systematic improvement of Mg ~(2+) ion coordination in the MgO lattice with the sputtering duration. The onset of non-interacting molecular oxygen on the surface of the sputtered species on fused quartz was also observed for sputtering duration up to 81 min. Angle-dependent measurements exhibited the onset of an anisotropic nature of the formed chemical bonds with sputtering, which dominated for higher sputtering duration. X-ray diffraction (XRD) studies carried out for sputtering durations of 144, 256, and 400 min exhibited the presence of the rocksalt phase of MgO. Annealing at 700 °C led to the dominant local electronic structure and improved the crystallinity of MgO. Rutherford backscattering spectrometry (RBS) and cross-sectional scanning electron microscopy (SEM) revealed a layer of almost 80 nm was obtained for a sputtering duration of 400 min. Thus, these angle-dependent NEXAFS measurements along with XRD, RBS, and SEM analyses were able to give a complete account for the growth of the thin films. Moreover, information specific to the coordination of the ions, which is important in case of ultrathin films, could be obtained successfully using this technique.
机译：与薄膜生长有关的现象一直是科学界关注的问题。与这些现象有关的实验不仅提供了理解，而且还为控制这些膜的生长提供了一条途径。对于当前的工作，使用角度相关的近边缘X射线吸收精细结构（NEXAFS）测量研究了熔融石英上MgO薄膜的生长。为了了解MgO的生长，在高于5.0×10〜（？7）托的真空条件下，允许溅射5、10、25、36、49、81、144、256和400？min。 NEXAFS测量显示，在144、256和400分钟的溅射时间下，熔融石英表面MgO的逸出。在这些溅射持续时间以下，未观察到MgO。 NEXAFS测量进一步设想了随着溅射时间的延长，MgO晶格中Mg〜（2+）离子配位的系统性提高。在长达81分钟的溅射持续时间内，还观察到非相互作用分子氧在熔融石英表面上的溅射现象的发生。角度相关的测量显示了溅射形成的化学键的各向异性性质的开始，在更长的溅射持续时间内占主导地位。对144、256和400分钟的溅射时间进行的X射线衍射（XRD）研究显示出MgO的岩盐相的存在。 700°C退火导致主要的局部电子结构，并改善了MgO的结晶度。卢瑟福背散射光谱（RBS）和横截面扫描电子显微镜（SEM）显示，在400分钟的溅射时间内获得了约80 nm的涂层。因此，这些与角度相关的NEXAFS测量以及XRD，RBS和SEM分析能够完全说明薄膜的生长。此外，使用这种技术可以成功获得特定于离子配位的信息，这在超薄膜情况下非常重要。

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