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首页> 外文期刊>RSC Advances >Improvement of the structural and electronic properties of CZTSSe solar cells from spray pyrolysis by a CuGe seed layer
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Improvement of the structural and electronic properties of CZTSSe solar cells from spray pyrolysis by a CuGe seed layer

机译：通过CuGe种子层的喷雾热解改善CZTSSe太阳能电池的结构和电子性能

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We have produced CZTSSe solar cells by a sequential growth process. First, CZTS precursors were deposited on Mo-coated soda lime glass substrates by chemical spray pyrolysis from an aqueous solution containing Cu, Zn and Sn metal salts and thiourea. In a second step the precursor was selenized at 530 °C for 8 min, resulting in fair solar cell properties. Further, we have investigated the influence of a 20 nm CuGe seed layer, which was sputtered on the Mo-surface prior to CZTS precursor deposition, on the morphology of the resulting absorber and on the performance of CZTSSe solar cells. We observe that the formation of MoSe2 and the consequent decomposition reactions at the back contact region of the CZTSSe layers during the annealing process were suppressed by introducing the CuGe seed layer, and that grain growth at the Mo/CZTSSe interface region was enhanced. The performance of CZTSSe solar cells prepared with a 20 nm CuGe seed layer shows considerable improvement compared to the processing without CuGe introduction.
机译：我们通过连续生长工艺生产了CZTSSe太阳能电池。首先，通过化学喷雾热解法从含有铜，锌和锡金属盐和硫脲的水溶液中将CZTS前体沉积在涂有Mo的钠钙玻璃基板上。在第二步中，将前体在530°C的温度下硒化8分钟，从而获得良好的太阳能电池性能。此外，我们研究了在CZTS前驱物沉积之前溅射在Mo表面的20 nm CuGe籽晶层对所得吸收体的形态以及CZTSSe太阳能电池性能的影响。我们观察到，通过引入CuGe种子层，可以抑制退火过程中CZTSSe层背面接触区MoSe 2 的形成以及随后的分解反应，并且Mo / CZTSSe界面区域的晶粒生长得到增强。与未引入CuGe的工艺相比，使用20 nm CuGe种子层制备的CZTSSe太阳能电池的性能显示出显着的提高。

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