Correction: A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy

Marc Courté; Sandeep G. Surya; Ramesh Thamankar; Chao Shen; V. Ramgopal Rao; Subodh G. Mhaisalkar; Denis Fichou

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Correction: A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy

机译：校正：在场效应晶体管中和通过导电原子力显微镜观察到的2,2'，6,6'-四苯基-二吡喃亚烷基薄膜中的非易失性电阻记忆效应

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Correction for ‘A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy’ by Marc Courté et al., RSC Adv., 2017, 7, 3336–3342.

机译：MarcCourté等人对“在场效应晶体管和导电原子力显微镜中观察到的2,2'，6,6'-四苯基-二吡喃次萘薄膜中的非易失性电阻记忆效应”的校正。 / em>， RSC Adv。，2017年，第7卷，第3336–3342页。 展开▼

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《RSC Advances》 |2017年第16期|共1页

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Marc Courté; Sandeep G. Surya; Ramesh Thamankar; Chao Shen; V. Ramgopal Rao; Subodh G. Mhaisalkar; Denis Fichou;
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中图分类化学;

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1. A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy [J] . Marc Courté, Sandeep G. Surya, Ramesh Thamankar, RSC Advances . 2017,第6期

机译：在场效应晶体管中和通过导电原子力显微镜观察到的2,2'，6,6'-四苯基-二吡喃亚砜薄膜中的非易失性电阻记忆效应

2. Study of the Resistive Switching Effect in Chromium Oxide Thin Films by Use of Conductive Atomic Force Microscopy [J] . Kim Ngoc Pham, Choi Minsu, Cao Vinh Tran, Journal of Electronic Materials . 2015,第10期

机译：导电原子力显微镜研究氧化铬薄膜中的电阻转换效应

3. The influence of copper top electrodes on the resistive switching effect in TiO_2 thin films studied by conductive atomic force microscopy [J] . Lin Yang, Carsten Kuegeler, Krzysztof Szot, Applied Physicsletters . 2009,第1期

机译：导电原子力显微镜研究铜顶电极对TiO_2薄膜电阻转换效应的影响

4. Combined piezo-force microscopy and conductive atomic-force microscopy for investigating leakage current conduction and local domain structure of PbTiO{sub}3 thin films [C] . Hyun Ju Lee, Keun Lee, Yong Cheol Shin, IEEE International Symposium on the Applications of Ferroelectrics . 2007

机译：组合压电显微镜和导电原子力显微镜，用于调查PBTIO {Sub} 3薄膜的漏电流导通和局域结构

5. Conductive Atomic Force Microscopy Study of Electron Transport Through Diazonium Derived Films and Mixed – Mode Bonded Layers on Gold and Carbon Surfaces [D] . Reid, Michael Shawn 2012

机译：导电原子力显微镜研究金和碳表面上重氮鎓衍生膜和混合模式键合层中电子传输的过程

6. Influence of Oxygen Pressure on the Domain Dynamics and Local Electrical Properties of BiFe0.95Mn0.05O3 Thin Films Studied by Piezoresponse Force Microscopy and Conductive Atomic Force Microscopy [O] . Kunyu Zhao, Huizhu Yu, Jian Zou, 2017

机译：氧响应对BiFe0.95Mn0.05O3薄膜的畴动态和局部电学特性的压电响应力显微镜和导电原子力显微镜研究

7. A non-volatile resistive memory effect in 2,2 ',6,6 '-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy (vol 7, pg 3336, 2017) [O] . COURTE, M, SURYA, SG, THAMANKAR, R, 2017

机译：在场效应晶体管和导电原子力显微镜下观察到的2,2'，6,6'-四苯基-二吡喃次萘薄膜中的非易失性电阻记忆效应（第7卷，第3336页，2017年）

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Correction: A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy

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