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A study of the 160 MeV Ni7+swift heavy ion irradiation effect of defect creation and shifting of the phonon modes on MnxZn1–xO thin films

机译:160 MeV Ni 7 + 快速重离子辐照对Mn x Zn 1– x O薄膜

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MnxZn1–xO thin films were successfully synthesized by the dip coating technique. The thin films were irradiated by Ni7+ swift heavy ions (SHI) with 1 × 1013 ions per cm2 fluence, and their structural, electrical, Raman spectral and surface morphological properties were investigated. X-ray diffraction patterns confirmed the P63mc space groups, and the crystallite size increased after SHI irradiation, due to electron rearrangements. IV studies revealed enhanced conductivity after Ni7+ SHI irradiation and showed the ohmic nature of the sample. The irradiation sensor efficiency and responsibility were calculated by using IV data, which revealed impressive results. Photoluminescence (PL) measurements were performed to determine the evolution of defects and defect-annealing during ion irradiation; enhancement in the luminosity of pure and 5% Mn substituted ZnO thin films was observed. The presence of the Raman active strongest optical phonon mode of ZnO at 436.19 cm?1 revealed that ZnO with hexagonal wurtzite structure supported the XRD results. Atomic force microscopy (AFM) images revealed the formation of nano-bunches on the surface and enhanced the surface roughness and skewness of the irradiated samples, due to coulombic interactions between electrons and ions.
机译:Mn x Zn 1– x O薄通过浸涂技术成功地合成了薄膜。用Ni 7 + 快速重离子(SHI)辐照薄膜,每个离子1×10 13 离子研究了cm 2 的注量及其结构,电学,拉曼光谱和表面形态学性质。 X射线衍射图证实了 P 6 3 mc 空间群,SHI辐照后晶粒尺寸增大,由于电子重排。 I V 研究表明,Ni 7 + SHI辐照后电导率增强,并显示出样品的欧姆特性。使用 I V 数据计算辐照传感器的效率和责任感,结果令人印象深刻。进行光致发光(PL)测量以确定离子辐照过程中缺陷的演变和缺陷退火;观察到纯的和5%Mn取代的ZnO薄膜的发光度增强。 436.19 cm ?1 的ZnO拉曼活性最强光学声子模的存在表明六方纤锌矿结构的ZnO支持XRD结果。原子力显微镜(AFM)图像揭示了由于电子和离子之间的库仑相互作用,纳米束在表面上形成并增强了被辐照样品的表面粗糙度和偏度。

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