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首页> 外文期刊>RSC Advances >Room-temperature synthesis of near-ultraviolet light-excited Tb3+-doped NaBiF4 green-emitting nanoparticles for solid-state lighting
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Room-temperature synthesis of near-ultraviolet light-excited Tb3+-doped NaBiF4 green-emitting nanoparticles for solid-state lighting

机译：室温合成近紫外光激发的掺Tb3 +的NaBiF4绿光发射纳米粒子用于固态照明

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摘要

We reported a facile reaction technique to prepare Tb ~(3+) -doped NaBiF _(4) green-emitting nanoparticles at room temperature. Under 378 nm excitation, the prepared samples exhibited the featured emissions of Tb ~(3+) ions and the green emission located at 543 nm corresponding to the ~(5) D _(0) → ~(7) F _(4) transition was observed in the photoluminescence (PL) emission spectra. The PL emission intensity relied on the dopant concentration and its optimum value was determined to be 50 mol%. The involved concentration quenching mechanism was dominated by the electric dipole–dipole interaction and the critical distance was evaluated to be around 10.4 ?. Meanwhile, the color coordinate and color purity of the obtained emission were revealed to be (0.328, 0.580) and 62.4%, respectively. The thermal quenching performance of the synthesized nanoparticles was analyzed using the temperature-dependent PL emission spectra and the activation energy was calculated to be 0.39 eV. By integrating a near-ultraviolet chip with the prepared nanoparticles, a dazzling green light-emitting diode was fabricated to explore the feasibility of the Tb ~(3+) -doped NaBiF _(4) nanoparticles for solid-state lighting applications.
机译：我们报道了一种简便的反应技术，可在室温下制备掺有Tb〜（3+）的NaBiF _（4）绿色发光纳米粒子。在378 nm激发下，制备的样品表现出Tb〜（3+）离子的特征发射，并且在543 nm处的绿色发射对应于〜（5）D _（0）→〜（7）F _（4）在光致发光（PL）发射光谱中观察到过渡。 PL发射强度依赖于掺杂剂浓度，并且其最佳值被确定为50mol％。所涉及的浓度猝灭机理主要由电偶极-偶极相互作用引起，临界距离据估计约为10.4？。同时，获得的发射的色坐标和色纯度分别为（0.328，0.580）和62.4％。使用温度相关的PL发射光谱分析了合成纳米颗粒的热淬灭性能，计算出的活化能为0.39 eV。通过将近紫外芯片与制备的纳米粒子集成在一起，制造了令人眼花green乱的绿色发光二极管，以探索掺有Tb〜（3+）的NaBiF _（4）纳米粒子在固态照明应用中的可行性。

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