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Fabrication of p-ZnO:Na-ZnO:Na homojunction by surface pulsed laser irradiation

机译：表面脉冲激光辐照制备p-ZnO：Na / n-ZnO：Na同质结

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An ingenious method of preparation of ZnO homojunctions for on-chip integration purposes is proposed, by local multiple pulse laser irradiating (MPLI) ZnO:Na film (NZO). The importance of this method lies in realization of p- and n-ZnO using only one kind of dopant (Na element) with a single layer of NZO film. The p-NZO as prepared by pulsed laser deposition (PLD) easily changes to n type after a couple of hours. However, more than ～150 times MPLI with laser fluence of 60 mJ cm?2 can be used to efficiently control the Na dopants to occupy the substitutional (NaZn) sites to realize a more stable p-NZO. The low temperature (6 K) PL spectra of the p-NZO at excitation power of 6 mW and the first principle calculation show that the acceptor energy level is ～161 meV. The current–voltage (I–V) curve of the p–n NZO homojunction fabricated by local MPLI shows good rectifying behavior, with turn on voltage at ～2.47 V under forward bias voltage and reverse breakdown voltage bias ～11.22 V. This convenient p–n junction technique could be used to simplify and improve controllability and accuracy of fabrication of microchip electronic devices.
机译：通过局部多脉冲激光辐照（MPLI）ZnO：Na膜（NZO），提出了一种用于芯片上集成目的的ZnO同质结的制备方法。该方法的重要性在于仅使用一种掺杂剂（Na元素）和单层NZO膜即可实现p-和n-ZnO。通过脉冲激光沉积（PLD）制备的p-NZO在几个小时后很容易变为n型。然而，MPLI的激光通量为60 mJ cm ？2 的MPLI的〜150倍以上可以有效地控制Na掺杂剂占据取代（NaZn）位点，从而实现更稳定的p-NZO在激发功率为6 mW时p-NZO的低温（6 K）PL光谱和第一原理计算表明，受主能级为〜161 meV。局部MPLI制备的p–n NZO同质结的电流-电压（ I – V ）曲线表现出良好的整流性能，正向电压下的开通电压为〜2.47 V偏置电压和反向击穿电压偏置〜11.22V。这种方便的p–n结技术可用于简化和提高微芯片电子设备制造的可控制性和准确性。

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