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The photovoltaic effect in a [001] orientated ZnO thin film and its physical mechanism

机译：[001]取向的ZnO薄膜中的光电效应及其物理机制

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摘要

We report a new type of photovoltaic effect. The photovoltaic device was constructed using a [001] orientated wurtzite ZnO thin film synthesized by heating Zn(NO3)2 solution. The open-circuit voltage (Voc) and short-circuit current (Isc) of the ZnO photovoltaic device are 0.16 mV and 0.25 μA, respectively, under 365 nm ultraviolet lamp (3 W) illumination. Current rectification across the top and bottom planes of the ZnO thin film was observed. The photovoltaic and rectifying properties of the ZnO thin film are related to the magnitude of the TC(002). An internal electric field is produced in the ZnO film by spontaneous polarization in the [001] direction. The presence of the internal electric field is the fundamental physical basis of the photovoltaic effect, and a new physical mechanism of photon-to-electron conversion is proposed. The electrostatic potential provides a driving force for flow of the photogenerated electrons and holes in the semiconductor and in an external load, and thus the photo-to-electron conversion is achieved. Our result suggests thin film texturing as a strategy to develop photovoltaic devices beyond p–n junction. In addition, the photo-to-electron conversion model provides new insights into the understanding of the photovoltaic effect in ferroelectric and pyroelectric materials as well as the design and fabrication of advanced solar cells and other electronic and optoelectronic devices.
机译：我们报告了一种新型的光电效应。使用通过加热Zn（NO 3 ） 2 合成的[001]取向纤锌矿型ZnO薄膜构建光伏器件。小>解决方案。开路电压（ V oc ）和短路电流（ I 在365 nm紫外灯（3 W）照射下，ZnO光伏器件的sc ）分别为0.16 mV和0.25μA。观察到横跨ZnO薄膜顶部和底部平面的电流整流。 ZnO薄膜的光电特性和整流特性与TC（002）的大小有关。通过在[001]方向上自发极化，在ZnO膜中产生内部电场。内部电场的存在是光伏效应的基本物理基础，并提出了光子-电子转换的新物理机制。静电势为半导体和外部负载中的光生电子和空穴的流动提供了驱动力，因此实现了光电子转换。我们的结果表明，将薄膜纹理化作为开发超越pn结的光伏器件的策略。此外，光电子转换模型为了解铁电和热电材料中的光伏效应以及高级太阳能电池以及其他电子和光电设备的设计和制造提供了新的见解。

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