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Underlying mechanism of blue emission enhancement in Au decorated p-GaN film

机译:Au修饰的p-GaN薄膜中蓝色发射增强的潜在机理

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Localized surface plasmons (LSPs) excited on metallic structures often play a significant role in mediating the photoluminescence (PL) of semiconductors. For p-GaN film, due to the LSP coupling, blue emission was enhanced while defect-related green emission was quenched to noise level after the decoration with Au nanoparticles (NPs). Why could the Au SP in the green light region enhance the blue and even ultraviolet emission? In this paper, a series of near/far-field spectral analyses and simulations were conducted to understand this process. A clear physical model of LSP-induced electron transfer was proposed to explain the defect-related LSP generation, coupling, electron transfer, and further blue emission increase with green emission reduction. Based on the PL measurement, an insulating SiO2 layer was introduced to confirm the LSP-induced electron transfer between Au and GaN. Additional green light was introduced to observe the LSP-induced PL enhancement, in the same way as for samples with defects. Our study provides a full understanding of the mechanism of PL enhancement in Au decorated GaN and this model should be universal for similar metal/semiconductor systems.
机译:在金属结构上激发的局部表面等离子体激元(LSP)通常在介导半导体的光致发光(PL)中起重要作用。对于p-GaN膜,由于用LSP耦合,在用金纳米粒子(NPs)装饰后,蓝色发射增强,而与缺陷相关的绿色发射淬灭到噪声水平。为什么绿光区的Au SP可以增强蓝色甚至紫外线的发射?在本文中,进行了一系列近/远场光谱分析和模拟,以了解这一过程。提出了一个清晰的LSP诱导的电子转移的物理模型,以解释与缺陷相关的LSP的产生,耦合,电子转移,以及随着绿色发射的减少而进一步增加的蓝色发射。基于PL测量,引入绝缘的SiO 2 层以确认LSP诱导的Au与GaN之间的电子转移。引入额外的绿光以观察LSP诱导的PL增强,方法与有缺陷的样品相同。我们的研究提供了对Au装饰的GaN中PL增强机理的全面理解,并且该模型对于相似的金属/半导体系统应该是通用的。

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