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Electrical conductivity and dielectric behaviour of nanocrystalline La0.6Gd0.1Sr0.3Mn0.75Si0.25O3

机译:纳米晶La0.6Gd0.1Sr0.3Mn0.75Si0.25O3的电导率和介电行为

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An La _(0.6) Gd _(0.1) Sr _(0.3) Mn _(0.75) Si _(0.25) O _(3) ceramic was prepared via a solution-based chemical technique. X-ray diffraction study confirms the formation of the compound in the orthorhombic structure with the Pnma group space. Dielectric properties have been investigated in the temperature range of 85–290 K with the frequency range 40 Hz to 2 MHz. The conductivity spectra have been investigated by the Jonscher universal power law: σ ( ω )? = ? σ _(dc) ? + ? Aω ~( n ) , where ω is the frequency of the ac field, and n is the exponent. The deduced exponent ‘ n ’ values prove that a hopping model is the dominating mechanism in the material. Based on dc-electrical resistivity study, the conduction process is found to be dominated by a thermally activated small polaron hopping (SPH) mechanism. Complex impedance analysis (CIA) indicates the presence of a relaxation phenomenon and allows us to modelize the sample in terms of an electrical equivalent circuit. Moreover, the impedance study confirms the contribution of grain boundaries to the electrical properties.
机译:通过基于溶液的化学技术制备了La _(0.6)Gd _(0.1)Sr _(0.3)Mn _(0.75)Si _(0.25)O _(3)陶瓷。 X射线衍射研究证实了该化合物在具有Pnma基空间的正交结构中的形成。已经在温度范围为40 Hz至2 MHz的85–290 K的温度范围内研究了介电性能。电导率谱已通过Jonscher通用幂定律进行了研究:σ(ω)? =? σ_(dc)吗? +? Aω〜(n),其中ω是交流场的频率,n是指数。推导的指数“ n”值证明了跳跃模型是材料中的主导机制。根据直流电阻率研究,发现传导过程受热激活小极化子跳跃(SPH)机制支配。复阻抗分析(CIA)表示存在松弛现象,并允许我们根据等效电路对样本进行建模。此外,阻抗研究证实了晶界对电性能的贡献。

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