• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>RSC Advances >Interface tailoring through the supply of optimized oxygen and hydrogen to semiconductors for highly stable top-gate-structured high-mobility oxide thin-film transistors
【24h】

Interface tailoring through the supply of optimized oxygen and hydrogen to semiconductors for highly stable top-gate-structured high-mobility oxide thin-film transistors

机译：通过向半导体提供优化的氧气和氢气来进行界面定制，以实现高度稳定的顶栅结构高迁移率氧化物薄膜晶体管

获取原文
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Self-aligned structured oxide thin-film transistors (TFTs) are appropriate candidates for use in the backplanes of high-end displays. Although SiN _( x ) is an appropriate candidate for use in the gate insulators (GIs) of high-performance driving TFTs, direct deposition of SiN _( x ) on top of high-mobility oxide semiconductors is impossible due to significant hydrogen (H) incorporation. In this study, we used AlO _( x ) deposited by thermal atomic layer deposition (T-ALD) as the first GI, as it has good H barrier characteristics. During the T-ALD, however, a small amount of H from H _(2) O can also be incorporated into the adjacent active layer. In here, we performed O _(2) or N _(2) O plasma treatment just prior to the T-ALD process to control the carrier density, and utilized H to passivate the defects rather than generate free carriers. While the TFT fabricated without plasma treatment exhibited conductive characteristics, both O _(2) and N _(2) O plasma-treated TFTs exhibited good transfer characteristics, with a V _(th) of 2 V and high mobility (～30 cm ~(2) V ~(?1) s ~(?1) ). Although the TFT with a plasma-enhanced atomic layer deposited (PE-ALD) GI exhibited reasonable on/off characteristics, even without any plasma treatment, it exhibited poor stability. In contrast, the O _(2) plasma-treated TFT with T-ALD GI exhibited outstanding stability, i.e. , a V _(th) shift of 0.23 V under positive-bias temperature stress for 10 ks and a current decay of 1.2% under current stress for 3 ks. Therefore, the T-ALD process for GI deposition can be adopted to yield high-mobility, high-stability top-gate-structured oxide TFTs under O _(2) or N _(2) O plasma treatment.
机译：自对准结构化氧化物薄膜晶体管（TFT）是适合用于高端显示器背板的候选材料。尽管SiN _（x）是适合用于高性能驱动TFT的栅极绝缘体（GI）的候选材料，但是由于存在大量的氢（H），因此无法在高迁移率氧化物半导体的顶部直接沉积SiN _（x）。 ）成立。在这项研究中，我们使用通过热原子层沉积（T-ALD）沉积的AlO _（x）作为第一个GI，因为它具有良好的H势垒特性。然而，在T-ALD期间，也可以将来自H_（2）O的少量H引入到相邻的有源层中。在这里，我们在T-ALD工艺之前进行O_（2）或N_（2）O等离子体处理，以控制载流子密度，并利用H钝化缺陷而不产生自由载流子。尽管未经等离子体处理的TFT表现出导电特性，但O _（2）和N _（2）O等离子体处理的TFT都表现出良好的转移特性，V _（th）为2 V，迁移率高（约30 cm） 〜（2）V〜（？1）s〜（？1））。尽管具有等离子体增强的原子层沉积（PE-ALD）GI的TFT表现出合理的开/关特性，但即使不进行任何等离子体处理，其稳定性也很差。相比之下，具有T-ALD GI的O _（2）等离子体处理的TFT表现出出色的稳定性，即在10 ks的正偏置温度应力下V_（th）的偏移为0.23 V，电流衰减为1.2％在3 ks的电流应力下。因此，可以采用用于GI沉积的T-ALD工艺在O _（2）或N _（2）O等离子体处理下产生高迁移率，高稳定性的顶栅结构氧化物TFT。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号