• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>RSC Advances >Accurate analysis of the size distribution and crystallinity of boron doped Si nanocrystals via Raman and PL spectra
【24h】

Accurate analysis of the size distribution and crystallinity of boron doped Si nanocrystals via Raman and PL spectra

机译：通过拉曼光谱和PL光谱精确分析硼掺杂的Si纳米晶的尺寸分布和结晶度

获取原文
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

A narrow size distribution of quantum dots (QDs) is needed for their application in photovoltaics but collection of such information is difficult. This paper demonstrates the application of Raman spectroscopy as a characterisation tool to extract the size distribution and crystalline fraction of Si QD samples fabricated through the sputter-anneal method. Measured Raman spectra of Si QD materials are de-convoluted into four components according to their origins and Raman scattering by Si QD cores is described by a modified one phonon confinement model, while other components are reproduced with Gaussian functions. Through fitting of Raman spectra, Si QD size distributions and Si crystalline fractions are obtained. The results are compared with the values extracted from PL modelling on a series of B doped Si QD samples. The good consistency between the values extracted by these two methods confirms the validity of the Raman model. The result confirms that Si crystallization has been suppressed by B doping as the average Si QD size and Si crystalline fraction are reduced with increased B doping level.
机译：量子点（QD）在光伏中的应用需要窄尺寸的分布，但是很难收集此类信息。本文演示了拉曼光谱作为表征工具的应用，以提取通过溅射退火方法制备的Si QD样品的尺寸分布和晶体分数。 Si QD材料的测量拉曼光谱根据其来源被解卷积为四个分量，并且通过改进的一个声子约束模型描述了Si QD核对Si QD核的拉曼散射，而其他分量则具有高斯函数。通过拟合拉曼光谱，获得了Si QD尺寸分布和Si晶体分数。将结果与在一系列B掺杂的Si QD样品上从PL建模中提取的值进行比较。通过这两种方法提取的值之间的良好一致性证实了拉曼模型的有效性。结果证实，随着B掺杂水平的提高，平均Si QD尺寸和Si结晶分数降低，B掺杂抑制了Si结晶。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号