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Nanowire Y-junction formation during self-faceting on high-index GaAs substrates

机译：在高折射率GaAs衬底上自刻面过程中形成纳米线Y结

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摘要

A major current focus in nanotechnology is the precise control of the self-assembling of semiconductor structures at the nanometric level. Highly uniform structures such as quantum wires can now be fabricated from the self-assembly of nanometric facet arrays produced using high-index substrates and epitaxial techniques. However, the self-assembling of more complex nanostructures such as Y-junctions is a more involved problem, hindering potential technological applications and one-dimensional physics exploration. In this contribution, we report on the observation of high-order and two-dimensional mechanisms in the Molecular Beam Epitaxy growth of GaAs on (6 3 1) oriented GaAs substrates. These mechanisms allow the formation of a regular alternating pattern of bifurcated nanowires, the Y-junctions. The Y-junctionanowire arrays have suitable dimensions to form a one-dimensional electron gas device by use of a modulation doping structure with a source, a drain, and gate electrodes. Finally, the potential use of the bifurcated structures for the exploration of one-dimensional transport and as a viable alternative to carbon nanotube Y-junctions is discussed.
机译：纳米技术中当前的主要焦点是在纳米级精确控制半导体结构的自组装。现在可以通过使用高折射率衬底和外延技术生产的纳米小平面阵列的自组装来制造高度均匀的结构，例如量子线。然而，更复杂的纳米结构（如Y型结）的自组装是一个涉及更大的问题，阻碍了潜在的技术应用和一维物理探索。在此贡献中，我们报告了在（6 3 1）取向的GaAs衬底上GaAs分子束外延生长中的高阶和二维机理的观察结果。这些机制允许形成叉状纳米线的规则交替图案，即Y结。 Y结/纳米线阵列具有合适的尺寸，以通过使用具有源极，漏极和栅极的调制掺杂结构来形成一维电子气器件。最后，讨论了分叉结构在探索一维传输中的潜在用途以及作为碳纳米管Y结的可行替代方案的潜力。

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