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Controllable synthesis and magnetotransport properties of Cd3As2 Dirac semimetal nanostructures

机译：Cd 3 As 2 Dirac半金属纳米结构的可控合成及磁输运性质

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Cd3As2, known as the three-dimensional (3D) analogue of graphene, is a Dirac semimetal with a linear dispersion relation along all three directions in momentum space. Here, Cd3As2 nanostructures with various morphologies, including nanowires, nanobelts, nanoplates and nano-octahedra, were synthesized by a facile chemical vapour deposition method. All these kinds of morphologies can be synthesised by carefully adjusting the pressure and argon flow rate. Further, we systematically investigated the magnetotransport properties of the as-grown nanostructures. The temperature dependences of resistance all displayed insulating behaviour, indicating the low carrier density and the Fermi level close to the Dirac point in our Cd3As2 nanostructures. All nanodevices hosted the unsaturated magnetoresistance even up to 14 T. The linear magnetoresistance was observed in nanodevices based on nanoribbons and nanowires. Our detailed study on the morphology regulation and magnetotransport properties of Cd3As2 nanostructures is valuable for the understanding of the growth process and the future nanoelectronic applications of 3D Dirac semimetals.
机译：Cd 3 As 2 是石墨烯的三维（3D）类似物，是一种狄拉克半金属在动量空间中沿所有三个方向具有线性色散关系。在这里，Cd 3 As 2 纳米结构具有各种形态，包括纳米线，纳米带，纳米板和纳米八面体，通过简便的化学气相沉积法合成了它们。通过仔细调节压力和氩气流量，可以合成所有这些形态。此外，我们系统地研究了所生长的纳米结构的磁传输性质。电阻的温度依赖性都显示出绝缘行为，表明在我们的Cd 3 As 2中低载流子密度和费米能级接近狄拉克点 纳米结构。所有纳米器件都具有高达14 T的不饱和磁阻。在基于纳米带和纳米线的纳米器件中观察到线性磁阻。我们对Cd 3 As 2 纳米结构的形态调控和磁输运性质的详细研究对于理解3D Dirac半金属的成长过程和未来的纳米电子应用。

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