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Quantum dots to probe temperature and pressure in highly confined liquids

机译：量子点可探测高度受限液体中的温度和压力

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A new in situ technique for temperature and pressure measurement within dynamic thin-film flows of liquids is presented. The technique is based on the fluorescence emission sensitivity of CdSe/CdS/ZnS quantum dots to temperature and pressure variations. In this respect, the quantum dots were dispersed in squalane, and their emission energy dependence on temperature and pressure was calibrated under static conditions. Temperature calibration was established between 295 K and 393 K showing a temperature sensitivity of 0.32 meV K ~(?1) . Pressure calibration was, in turn, conducted up to 1.1 GPa using a diamond anvil cell, yielding a pressure sensitivity of 33.2 meV GPa ~(?1) . The potential of CdSe/CdS/ZnS quantum dots as sensors to probe temperature and pressure was proven by applying the in situ technique to thin films of liquids undergoing dynamic conditions. Namely, temperature rises have been measured in liquid films subjected to shear heating between two parallel plates in an optical rheometer. In addition, pressure rises have been measured in a lubricated point contact under pure rolling and isothermal conditions. In both cases, the measured values have been successfully compared with theoretical or numerical predictions. These comparisons allowed the validation of the new in situ technique and demonstrated the potential of the quantum dots for further mapping application in more complex and/or severe conditions.
机译：提出了一种在液体动态薄膜流中进行温度和压力测量的新方法。该技术基于CdSe / CdS / ZnS量子点对温度和压力变化的荧光发射敏感性。在这方面，量子点分散在角鲨烷中，并且在静态条件下校准了它们对温度和压力的发射能量依赖性。在295 K和393 K之间建立温度校准，显示出0.32 meV K〜（？1）的温度灵敏度。依次使用金刚石砧盒进行压力校准至1.1 GPa，产生33.2 meV GPa〜（？1）的压力灵敏度。通过将原位技术应用于经历动态条件的液体薄膜，证明了CdSe / CdS / ZnS量子点作为探测温度和压力传感器的潜力。即，已经在光学流变仪中在两个平行板之间经受剪切加热的液体膜中测量了温度升高。另外，已经在纯轧制和等温条件下在润滑点接触中测量到压力升高。在这两种情况下，测量值均已成功与理论或数值预测进行比较。这些比较允许对新的原位技术进行验证，并证明了量子点在更复杂和/或更严酷的条件下进一步作图应用的潜力。

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