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Temperature-dependent evolution of interfacial zones in SiCf/C/Ti17 composites

机译：SiC f / C / Ti17复合材料中界面区的温度依赖性演化

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The continuous SiC fibre reinforced Ti matrix composites are usually subjected to elevated service temperature, representing a wide range of possible applications relying on the corresponding interfacial stability. SiC fibres coated by a turbostratic C reinforced Ti17 matrix composites (SiCf/C/Ti17) were fabricated and the evolution of interfacial zones subsequently to processing of thermal exposure to distinct conditions: 450 °C/600 h, 800 °C/600 h and 1100 °C/2 h was investigated. The corresponding low-temperature long term and high-temperature short term applications were evaluated. It was discovered that the interfacial zone of the as-processed SiCf/C/Ti17 could be described as turbostratic C||amorphous C||fine-grained TiC||transition TiC||coarse-grained TiC, remaining stable subsequently to 450 °C/600 h of exposure. The same thickness of each sub-layer was observed as the as-processed sample was identified. The 800 °C/600 h thermal treatment induced apparent increment in the coarse-grained TiC sub-layer thickness, reaching twice the as-processed sample increment as well as the grains growth in the fine-grained TiC sub-layer. On the contrast, the 1100 °C/2 h thermal treatment not only induced a remarkable increment in thickness of the coarse-grained TiC sub-layer, but also actuated the grain growth of the fine-grained TiC sub-layer. Consequently, it merged the sub-layer with the transition TiC sub-layer. The diffusion behavior of C atoms activated by different temperatures could be responsible for the aforementioned temperature-dependent evolution of the interfacial zones in the SiCf/C/Ti17.
机译：连续SiC纤维增强的Ti基复合材料通常要承受较高的使用温度，这取决于相应的界面稳定性，代表了广泛的可能应用。制备了由涡轮层C增强Ti17基复合材料（SiC f / C / Ti17）涂覆的SiC纤维，并在不同条件下进行热暴露后界面区域的演变：研究了450℃/ 600h，800℃/ 600h和1100℃/ 2h。评估了相应的低温长期和高温短期应用。已经发现，加工后的SiC f / C / Ti17的界面区域可以描述为涡轮层C ||非晶C ||细晶TiC ||。过渡TiC ||粗粒TiC，随后在450°C / 600 h暴露后保持稳定。当确定加工后的样品时，观察到每个子层的厚度相同。 800°C / 600 h热处理引起了粗晶粒TiC子层厚度的明显增加，达到了样品处理后两倍的增量以及细晶粒TiC子层中晶粒的生长。相比之下，1100°C / 2 h热处理不仅引起了粗晶粒TiC子层厚度的显着增加，而且还激活了细晶粒TiC子层的晶粒长大。因此，它将子层与过渡TiC子层合并在一起。 C原子在不同温度下的扩散行为可能是上述SiC f / C / Ti17界面区域温度依赖性演化的原因。

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