• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>RSC Advances >Improved giant dielectric properties of CaCu3Ti4O12 via simultaneously tuning the electrical properties of grains and grain boundaries by F? substitution
【24h】

Improved giant dielectric properties of CaCu3Ti4O12 via simultaneously tuning the electrical properties of grains and grain boundaries by F? substitution

机译：通过同时调整晶粒和晶界的电学性质，改善了CaCu 3 Ti 4 O 12 的超大介电特性通过F ？替换

获取原文
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

A novel concept to simultaneously modify the electric responses of the grain and grain boundaries of CaCu3Ti4O12 ceramics was proposed, involving doping with F? anions to improve the giant dielectric properties. The grain growth rate of CaCu3Ti4O12 ceramics was enhanced by doping with F? anions, which were found to be homogeneously dispersed in the microstructure. Substitution of F? anions can cause an increase in the resistance of the insulating grain boundary and a decrease in the grain resistance. The former originated from the ability of the F? dopant to enhance the Schottky barrier height at the grain boundaries, leading to a great decrease in the dielectric loss tangent by a factor of 5 (tan?δ < 0.1). The latter was primarily attributed to the increase in Ti3+ and Cu+ concentrations due to charge compensation, resulting in a significantly enhanced intensity of space charge polarization at the grain boundaries. This is the primary cause of the increase in dielectric permittivity from ≈104 to ≈105. The giant dielectric and electrical properties were well described by the Maxwell–Wagner polarization relaxation based on the internal barrier layer capacitor model of Schottky barriers at the grain boundaries.
机译：同时修改CaCu 3 Ti 4 O 的晶界和晶界的电响应的新概念提出了small> 12 陶瓷，其中掺入F ？ 阴离子以改善其巨大的介电性能。 CaCu 3 Ti 4 O 12 <通过掺入均匀分布在微观结构中的F ？ 阴离子增强/ small>陶瓷。 F ？ 阴离子的取代会引起绝缘晶界电阻的增加和晶粒电阻的降低。前者起因于F ？ 掺杂剂提高晶界处肖特基势垒高度的能力，导致介电损耗角正切大大降低了5（tanδδ <0.1）。后者主要是由于电荷补偿导致Ti 3 + 和Cu + 浓度增加的结果，明显增强了晶界处的空间电荷极化强度。这是介电常数从≈10 4 增加到≈10 5 的主要原因。基于晶粒边界处肖特基势垒的内部势垒层电容器模型的麦克斯韦-瓦格纳极化弛豫很好地描述了巨大的介电和电性能。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号