A series of PbBr2-doped polycrystalline SnSe samples were synthesized by melting and hot pressing. By PbBr2 doping, the carrier concentration of SnSe was increased to 1.86 × 1019 cm?3 from 2.41 × 1017 cm?3, resulting in an increased electrical conductivity of 40 ± 2 S cm?1 at 713 K while the undoped SnSe was only 5.1 ± 0.3 S cm?1. Meanwhile, the PbBr2-doped samples also exhibit a larger density of state effective mass (0.812m0). Therefore, a high power factor of 4.8 ± 0.5 μW cm?1 K?2 and a peak ZT of 0.54 ± 0.1 were achieved at 793 K perpendicular to the hot pressing direction.
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机译：通过熔融和热压合成了一系列掺杂PbBr 2 的多晶SnSe样品。通过掺杂PbBr 2 ，SnSe的载流子浓度增加到1.86×10 19 cm < sup>？3 从2.41×10 17 cm ？3 在713 K下电导率增加40±2 S cm ？1 ，而未掺杂的SnSe仅为5.1±0.3 S cm ？1 < / sup> 。同时，掺杂PbBr 2 的样品也表现出较大的状态有效质量密度（0.812 m 0 ）。因此，高功率因数为4.8±0.5μWcm ？1 K ？2 ，峰值为 ZT 为0.54±0.1。
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