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Anti-site defect effect on the electronic structure of a Bi2Te3 topological insulator

机译:反位缺陷对Bi 2 Te 3 拓扑绝缘体电子结构的影响

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Tuning the Fermi level (EF) in Bi2Te3 topological-insulator (TI) films is demonstrated on controlling the temperature of growth with molecular-beam epitaxy (MBE). Angle-resolved photoemission spectra (ARPES) reveal that EF of Bi2Te3 thin films shifts systematically with the growth temperature (Tg). The key role that a Bi-on-Te(1) (BiTe1) antisite defect plays in the electronic structure is identified through extended X-ray-absorption fine-structure (EXAFS) spectra at the Bi L3-edge. Calculations of electronic structure support the results of fitting the EXAFS, indicating that the variation of EF is due to the formation and suppression of BiTe1 that is tunable with the growth temperature. Our findings provide not only insight into the correlation between the defect structure and electronic properties but also a simple route to control the intrinsic topological surface states, which could be useful for applications in TI-based advanced electronic and spintronic devices.
机译:调整Bi 2 Te 中的费米能级( E F 3 拓扑绝缘体(TI)膜通过分子束外延(MBE)控制生长温度而得到证明。角度分辨光发射光谱(ARPES)显示Bi 2 E F Te 3 薄膜随着生长温度( T g )的变化而系统地移动。通过扩展的X射线吸收精细结构确定了Bi-on-Te(1)(Bi Te1 )反位缺陷在电子结构中的关键作用Bi L 3 边缘的(EXAFS)光谱。电子结构的计算支持拟合EXAFS的结果,表明 E F 的变化是由于Bi < small> Te1 ,可以根据生长温度进行调节。我们的发现不仅提供了对缺陷结构与电子特性之间关系的深入了解,而且还提供了一种控制固有拓扑表面状态的简单途径,这对于在基于TI的先进电子和自旋电子器件中的应用很有用。

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