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Controlled synthesis of uniform multilayer hexagonal boron nitride films on Fe2B alloy

机译：Fe2B合金上均匀多层氮化硼六角形薄膜的可控合成

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Two-dimensional (2D) hexagonal boron nitride (h-BN) is highly appreciated for its excellent insulating performance and absence of dangling bonds, which could be employed to maintain the intrinsic properties of 2D materials. However, controllable synthesis of large scale multilayer h-BN is still very challenging. Here, we demonstrate chemical vapor deposition (CVD) growth of multilayer h-BN by using iron boride (Fe _(2) B) alloy and nitrogen (N _(2) ) as precursors. Different from the self-limited growth mechanism of monolayer h-BN on catalytic metal surfaces, with sufficient B source in the bulk, Fe _(2) B alloy promotes the controllable isothermal segregation of multilayer h-BN by reacting with active N atoms on the surface of the substrate. Microscopic and spectroscopic characterizations prove the high uniformity and crystalline quality of h-BN with a highly orientated layered lattice structure. The achievement of large scale multilayer h-BN in this work would facilitate its applications in 2D electronics and optoelectronics in the future.
机译：二维（2D）六方氮化硼（h-BN）因其出色的绝缘性能和不存在的悬空键而受到高度赞赏，该悬空键可用于保持2D材料的固有特性。然而，大规模多层h-BN的可控合成仍然非常具有挑战性。在这里，我们演示了通过使用硼化铁（Fe _（2）B）合金和氮气（N _（2））作为前驱体，多层h-BN的化学气相沉积（CVD）生长。 Fe _（2）B合金与催化金属表面单层h-BN的自限生长机理不同，在主体中具有足够的B源，Fe _（2）B合金通过与反应中的活性N原子反应来促进多层h-BN的可控等温偏析。基材表面。显微和光谱表征证明了具有高度取向的层状晶格结构的h-BN具有很高的均匀性和结晶质量。这项工作中大规模多层h-BN的实现将促进其将来在2D电子学和光电子学中的应用。

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