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首页> 外文期刊>RSC Advances >Annealing atmosphere effect on the resistive switching and magnetic properties of spinel Co3O4 thin films prepared by a sol–gel technique
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Annealing atmosphere effect on the resistive switching and magnetic properties of spinel Co3O4 thin films prepared by a sol–gel technique

机译：退火气氛对溶胶-凝胶技术制备的尖晶石Co3O4薄膜的电阻转换和磁性能的影响

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摘要

Spinel Co _(3) O _(4) thin films were synthesized using a sol–gel technique to study the annealing atmosphere effect on resistive switching (RS) and magnetic modulation properties. Compared with oxygen and air annealed Pt/Co _(3) O _(4) /Pt stacks, the nitrogen annealed Pt/Co _(3) O _(4) /Pt stack shows optimal switching parameters such as a lower forming voltage, uniform distribution of switching voltages, excellent cycle-to-cycle endurance (>800 cycles), and good data retention. Improvement in switching parameters is ascribed to the formation of confined conducting filaments (CFs) which are composed of oxygen vacancies. From the analysis of current–voltage characteristics and their temperature dependence, the carrier transport mechanism in the high-field region of the high resistance state was dominated by Schottky emission. Besides, temperature dependent resistance and magnetization variations revealed that the physical mechanism of RS can be explained based on the formation and rupture of oxygen vacancy based CFs. In addition, multilevel saturation magnetization under different resistance states is attributed to the variation of oxygen vacancy concentration accompanied with the changes in the valence state of cations. Results suggested that using a nitrogen annealing atmosphere to anneal the thin films is a feasible approach to improve RS parameters and enhance the magnetic properties of Co _(3) O _(4) thin film, which shows promising applications to design multifunctional electro-magnetic coupling nonvolatile memory devices.
机译：利用溶胶-凝胶技术合成了尖晶石Co _（3）O _（4）薄膜，以研究退火气氛对电阻开关（RS）和磁调制特性的影响。与氧气和空气退火的Pt / Co _（3）O _（4）/ Pt烟囱相比，氮气退火的Pt / Co _（3）O _（4）/ Pt烟囱显示出最佳的开关参数，例如较低的成型电压，开关电压的均匀分布，出色的周期间耐久性（> 800个周期）和良好的数据保持能力。开关参数的改善归因于由氧空位构成的封闭导电丝（CFs）的形成。通过对电流-电压特性及其温度依赖性的分析，高阻态高场区的载流子传输机制主要由肖特基发射决定。此外，与温度有关的电阻和磁化强度变化表明，可以基于氧空位CFs的形成和破裂来解释RS的物理机理。另外，在不同电阻状态下的多级饱和磁化强度归因于氧空位浓度的变化以及阳离子的价态的变化。结果表明，使用氮气退火气氛对薄膜进行退火是改善RS参数和增强Co _（3）O _（4）薄膜磁性能的可行方法，在设计多功能电磁方面具有广阔的应用前景。耦合非易失性存储设备。

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