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Origin of the anomalous size-dependent increase of capacitance in boron nitride–graphene nanocapacitors

机译：氮化硼-石墨烯纳米电容器中与容量有关的尺寸异常增加的起因

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The anomalous size-dependent increase in capacitance in boron nitride–graphene nanocapacitors is a puzzle that has been initially attributed to the negative quantum capacitance exhibited by this particular materials system. However, we show in this work that the anomalous nanocapacitance of this system is not due to quantum effects but has pure electrostatic origin and can be explained by a parallel-plate (square) nanocapacitor model filled with a dielectric film characterized by a size/thickness-dependent relative permittivity. The model presented here is in excellent agreement with the experimentally measured capacitance values of recently fabricated graphene and hexagonal boron nitride nanocapacitors. The results obtained seem to suggest that the size-dependent increase of capacitance in the above-mentioned family of nanocapacitors can be explained by classical finite-size geometric electrostatic effects.
机译：氮化硼-石墨烯纳米电容器中电容大小的反常增加是一个难题，最初是由这种特殊材料系统表现出的负量子电容引起的。但是，我们在这项工作中表明，该系统的异常纳米电容不是由于量子效应引起的，而是具有纯静电源，可以用填充有尺寸/厚度为特征的介电膜的平行板（方形）纳米电容器模型来解释。依赖的相对介电常数。这里介绍的模型与最近制造的石墨烯和六方氮化硼纳米电容器的实验测量电容值非常吻合。所获得的结果似乎表明，上述纳米电容器系列中电容的尺寸依赖性增加可以通过经典的有限尺寸几何静电效应来解释。

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