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首页> 外文期刊>RSC Advances >Polymer/oxide bilayer dielectric for hysteresis-minimized 1?V operating 2D TMD transistors
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Polymer/oxide bilayer dielectric for hysteresis-minimized 1?V operating 2D TMD transistors

机译：聚合物/氧化物双层电介质，用于最小磁滞的1？V工作2D TMD晶体管

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Despite their huge impact on future electronics, two-dimensional (2D) dichalcogenide semiconductor (TMD) based transistors suffer from the hysteretic characteristics induced by the defect traps located at the dielectric/TMD channel interface. Here, we introduce a hydroxyl-group free organic dielectric divinyl-tetramethyldisiloxane-bis (benzocyclobutene) (BCB) between the channel and conventional SiO2 dielectric, to practically resolve such issues. Our results demonstrate that the electrical hysteresis in the n-channel MoS2 and p-channel MoTe2 transistors were significantly reduced to less than ～20% of initial value after being treated with hydrophobic BCB dielectric while their mobilities increased by factor of two. Such improvements are certainly attributed to the use of the hydroxyl-group free organic dielectric, since high density interface traps are related to hydroxyl-groups located on hydrophilic SiO2. This concept of interface trap reduction is extended to stable low voltage operation in 2D MoTe2 FET with 30 nm BCB/10 nm Al2O3 bilayer dielectric, which operates well at 1 V. We conclude that the interface engineering employing the BCB dielectric offers practical benefits for the high performance and stable operation of TMD-based transistors brightening the future of 2D TMD electronics.
机译：尽管它们对未来的电子设备有巨大的影响，但基于二维（2D）二硫化氢半导体（TMD）的晶体管仍会受到位于电介质/ TMD通道界面处的缺陷陷阱引起的磁滞特性的影响。在此，我们在通道和常规SiO 2 电介质之间引入了无羟基的有机电介质二乙烯基-四甲基二硅氧烷-双（苯并环丁烯）（BCB），以实际解决此类问题。我们的结果表明，n沟道MoS 2 和p沟道MoTe 2 晶体管的电滞是经疏水性BCB电介质处理后，其迁移率显着降低至初始值的约20％以下，而迁移率提高了两倍。这种改进肯定归因于无羟基有机电介质的使用，因为高密度界面陷阱与位于亲水性SiO 2 上的羟基有关。减少界面陷阱的概念已扩展到具有30 nm BCB / 10 nm Al 2 2 FET中的稳定低压操作> O 3 双层电介质，可在1 V电压下良好运行。我们得出的结论是，采用BCB电介质的接口工程具有高性能和稳定的实用优势基于TMD的晶体管的运行为2D TMD电子产品的未来增添了光彩。

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