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Enhanced efficiency and high temperature stability of hybrid quantum dot light-emitting diodes using molybdenum oxide doped hole transport layer

机译:使用掺杂氧化钼的空穴传输层的混合量子点发光二极管的效率提高和高温稳定性

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High power efficiency (PE) and stability of quantum dot (QD) light-emitting diodes (QLEDs) are important factors for practical use in various displays. However, hybrid QLEDs consisting of an organic hole transport layer (HTL) and an inorganic electron transport layer (ETL) sometimes have poor stability due to the low thermal stability of the organic HTL. To solve the problem, here, we report enhanced efficiency, lifetime, and temperature stability in inverted and hybrid structured QLEDs by adopting a MoO _(3) -doped HTL. Also, to improve the electron–hole charge carrier balance, a thin insulating interlayer was used between QDs and the ETL. As a result, the QLED with the p-doped HTL exhibited the increased PE by ~28% and longer lifetime compared to the pristine QLEDs. In addition, the QLED showed stable operation at the high temperature up to 400 K, whereas the control device failed to operate at 375 K. We systematically investigated the effect of the MoO _(3) -doping on the performance and thermal stability of the QLEDs. We believe that QLEDs with the p-doped HTL can be used for further QLED researches to simultaneously improve the efficiency, lifetime, and high temperature stability, which are highly required for their use in automotive and outdoor displays.
机译:高功率效率(PE)和量子点(QD)发光二极管(QLED)的稳定性是各种显示器中实际使用的重要因素。然而,由于有机HTL的低热稳定性,由有机空穴传输层(HTL)和无机电子传输层(ETL)组成的混合QLED有时具有较差的稳定性。为了解决该问题,在这里,我们报告了通过采用掺杂MoO_(3)的HTL增强了倒置和混合结构QLED的效率,寿命和温度稳定性。另外,为了改善电子空穴载流子的平衡,在量子点和ETL之间使用了一个薄的绝缘夹层。结果,与原始QLED相比,具有p掺杂HTL的QLED的PE增加了约28%,寿命更长。此外,QLED在高达400 K的高温下也显示出稳定的运行,而控制装置在375 K的温度下却无法运行。我们系统地研究了MoO _(3)掺杂对LED性能和热稳定性的影响。 QLED。我们相信具有p掺杂HTL的QLED可以用于进一步的QLED研究,以同时提高效率,使用寿命和高温稳定性,这是其在汽车和户外显示器中的高度要求。

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